AVS 50th International Symposium
    Plasma Science and Technology Tuesday Sessions
       Session PS-TuP

Paper PS-TuP2
A Novel Si/SiO@sub 2@ Etching Technique for Minimizing Charge-induced Microscopic Non-uniformity in Plasma Etching

Tuesday, November 4, 2003, 5:30 pm, Room Hall A-C

Session: Poster Session
Presenter: K.H. Baek, Samsung Electronics, South Korea
Authors: K.H. Baek, Samsung Electronics, South Korea
D.H. Lee, Sungkyunkwan University, South Korea
S.J. Jung, Sungkyunkwan University, South Korea
C.J. Kang, Samsung Electronics, South Korea
G.Y. Yeom, Sungkyunkwan University, South Korea
Correspondent: Click to Email
In this study, microscopic non-uniform etching characteristics solely caused by positive ions were investigated and a novel etching technique using energetic and directional neutrals was introduced as an alternative of reducing those charge-induced phenomena. To systematically investigate microscopic non-uniform etching characteristics, various samples designed to evaluate microscopic etching characteristics were prepared and etched in a homemade ICP(inductively coupled plasma) etching system, ion beam etching system, and neutral beam etching system. By analyzing all the results, we could clarify role of positive ions in the non-uniform etching phenomena and get an idea on reducing them. To realize the idea, we revised our previous neutral beam etching system so that it could improve flux and directionality of neutrals. By using this system, successful etching results for poly-Si and SiO2 nearly without the charge-induced phenomena were achieved, even though the results etched in the other systems show those non-uniform etching characteristics. Thus, we recommend energetic and directional neutrals as a potential etching source for the next generation technology era.