| 8:20am |
PS-FrM1
Multidimensional Plasma Sheaths and Resulting Ion/Fast Neutral Distributions on the Substrate Surface
D.J. Economou, D. Kim, University of Houston |
| 8:40am |
PS-FrM2
Study of Gas Phase Fluorocarbon Chemistries in a Modified Gaseous Electronics Conference Plasma Reactor Using Fourier Transform Infrared Spectroscopy and Ellipsometry
B. Zhou, E.A. Joseph, S.P. Sant, L.J. Overzet, M.J. Goeckner, University of Texas at Dallas |
| 9:00am |
PS-FrM3 Invited Paper
Measurement and Modeling of Plasma Feature Etching
H.H. Sawin, Massachusetts Institute of Technology |
| 9:40am |
PS-FrM5
The Influence of Ion Implantation on the Poisoning Mechanism During Reactive Magnetron Sputtering
D. Depla, R. De Gryse, University Ghent, Belgium |
| 10:00am |
PS-FrM6
The Role of Chamber Dimension in Fluorocarbon Etching of SiO@sub 2@ and its Effects on Gas and Surface-Phase Chemistry
E.A. Joseph, B. Zhou, S.P. Sant, L.J. Overzet, M.J. Goeckner, University of Texas - Dallas, B.E. Gnade, University of North Texas |
| 10:20am |
PS-FrM7
Molecular Dynamics Simulations of Silicon in Fluorocarbon Plasmas: Role of the Fluorocarbon Film as an Etchant Source
D. Humbird, D.B. Graves, University of California at Berkeley, X. Hua, G.S. Oehrlein, University of Maryland, College Park |
| 10:40am |
PS-FrM8
Surface Kinetics Study of Silicon Oxide Etching with Fluorocarbons Plasmas
O Kwon, H.H. Sawin, Massachusetts Institute of Technology |
| 11:00am |
PS-FrM9
Integrated Modeling of Etching, Cleaning and Barrier Coating PVD for Porous and Conventional SiO@sub 2@ for Fluorocarbon Based Chemistries@footnote 1@
A. Sankaran, M.J. Kushner, University of Illinois at Urbana-Champaign |
| 11:20am |
PS-FrM10
Analysis of ILD Sidewall Damage during Photoresist Removal Post Single and Dual Damascene Processing
N.C.M. Fuller, T.J. Dalton, M.E. Colburn, S.M. Gates, IBM T.J. Watson Research Center, R. Dellaguardia, IBM Microelectronics Division |