| AVS 50th International Symposium | |
| Plasma Science and Technology | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS+MM-MoA1 Understanding Deep Silicon Etching: Mechanisms for Formation and Removal of Sidewall Passivation M.L. Steen, IBM T.J. Watson Research Center, T.J. Dalton, IBM Semiconductor Research and Development Center, C.K. Tsang, R.W. Nunes, J. Vichiconti, E.A. Sullivan, B.N. To, D. Barrett, IBM T.J. Watson Research Center |
| 2:20pm | PS+MM-MoA2 Improvement of Anisotropy and Aspect Ratio of a Pattern Etched in Bosch Process by using a Faraday Cage J.-H. Min, G.-R. Lee, J.-K. Lee, S.H. Moon, Seoul National University, Korea, C.-K. Kim, Ajou University, Korea |
| 2:40pm | PS+MM-MoA3 Invited Paper Exploring Microdischarges for Manufacturing and Sensing Applications Y. Gianchandani, University of Michigan |
| 3:20pm | PS+MM-MoA5 Feature Scale Model of Etching High Aspect Ratio Structures in Silicon using SF@sub 6@/O@sub 2@ Plasma J. Belen, S. Gomez, University of California, Santa Barbara, M.W. Kiehlbauch, D.J. Cooperberg, Lam Research Corporation, E.S. Aydil, University of California, Santa Barbara |
| 3:40pm | PS+MM-MoA6 Etching of High Aspect Ratio Structures in Si using SF@sub 6@/O@sub 2@ Plasmas S. Gomez, J. Belen, University of California, Santa Barbara, M.W. Kiehlbauch, Lam Research Corporation, E.S. Aydil, University of California, Santa Barbara |
| 4:00pm | PS+MM-MoA7 Via Drilling on Silicon Wafers using the Cryogenic Process T. Tillocher, A. Basillais, X. Mellhaoui, P. Lefaucheux, GREMI, France, M. Boufnichel, ST Microelectronics, R. Dussart, P. Ranson, GREMI, France |
| 4:20pm | PS+MM-MoA8 Si, SiO@sub 2@ Feature Etching for MEMS Fabrication: A Combined Simulator Coupling Local Transport, Surface Etch, and Profile Evolution Models G. Kokkoris, C. Boukouras, A. Tserepi, National Center for Scientific Research (NCSR) "Demokritos", Greece, A.G. Boudouvis, National Technical University of Athens (NTUA), Greece, E. Gogolides, National Center for Scientific Research (NCSR) "Demokritos", Greece |
| 4:40pm | PS+MM-MoA9 In-Situ On-wafer Monitoring for Charge Build-up Voltage during Plasma Process T. Shimmura, S. Soda, M. Koyanagi, K. Hane, S. Samukawa, Tohoku University, Japan |
| 5:00pm | PS+MM-MoA10 Plasma Etching of Chromium as a Hard Mask for a Complex Metal Stack Etch D. Cruz, UCLA/Sandia National Laboratories, M.G. Blain, Sandia National Laboratories, J.P. Chang, University of California, Los Angeles |