| AVS 50th International Symposium | |
| High-k Gate Dielectrics and Devices Topical Conference | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:40pm | DI-TuA3 Invited Paper Invited Paper E. Cartier, IBM T.J. Watson Research Center |
| 3:20pm | DI-TuA5 Enhanced Tunneling in Symmetric Stacked Gate Dielectrics with Ultra-thin HfO@sub 2@ Layers (0.5-10. nm) Sandwiched between Thicker SiO@sub 2@ Layers (1.5 nm) C.L. Hinkle, C. Fulton, G. Lucovsky, R.J. Nemanich, North Carolina State University |
| 3:40pm | DI-TuA6 Observation of Bulk HfO@sub 2@ Defects by Spectroscopic Ellipsometry H. Takeuchi, D. Ha, T.-J. King, University of California at Berkeley |
| 4:00pm | DI-TuA7 Chemically Abrupt Interfaces between Lanthanum Aluminate and Silicon for Alternative Gate Dielectric Applications L.F. Edge, D.G. Schlom, Pennsylvania State University, S.A. Chambers, Pacific Northwest National Laboratory, C.L. Hinkle, G. Lucovsky, North Carolina State University |
| 4:20pm | DI-TuA8 Medium Energy Ion Scattering Studies of the Structure and Composition of Epitaxial SrTiO@sub 3@ Films on Silicon L.V. Goncharova, D.G. Starodub, E.L. Garfunkel, T. Gustafsson, Rutgers University, D.G. Schlom, Pennsylvania State University |
| 4:40pm | DI-TuA9 In-situ and Ex-situ Characterization of Barium Strontium Titanate Thin Films on Thermal SiO@sub 2@/Si Substrates N.A. Suvorova, C.M. Lopez, University of North Carolina, Chapel Hill, A.A. Suvorova, M. Saunders, University of Western Australia, E.A. Irene, University of North Carolina, Chapel Hill |
| 5:00pm | DI-TuA10 Band Offsets at Ba- SrTiO@sub 3@ / Si Interfaces F. Amy, A. Wan, A. Kahn, Princeton University |