| AVS 49th International Symposium | |
| Thin Films | Tuesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | TF-TuA1 Invited Paper Growth Kinetics and Scaling of High-K Materials Deposited by Atomic Layer Deposition R.J. Carter, IMEC, Belgium |
| 2:40pm | TF-TuA3 Effect of Growth Temperature on the Properties of ALD Grown ZrO@sub 2@ Films G. Scarel, E.K. Evangelou, S. Ferrari, S. Spiga, C. Wiemer, M. Fanciulli, Laboratorio MDM-INFM, Italy |
| 3:00pm | TF-TuA4 ZrO@sub2@ Thin Film Growth by CVD from Tetrakis-diethylamino-zirconium for High-k Gate Dielectrics I. Nishinaka, T. Kawamoto, Y. Shimogaki, University of Tokyo, Japan |
| 3:20pm | TF-TuA5 Atomic Layer Deposition of Zirconium Silicate Films Using Zirconium Tetrachloride and Tetra-n-butyl Orthosilicate S.W. Rhee, W.K. Kim, S.W. Kang, Pohang University of Science and Technology, Republic of Korea, N.I. Lee, J.H. Lee, H.K. Kang, Samsung Electronics Co., Ltd., Republic of Korea |
| 3:40pm | TF-TuA6 Characteristics of ZrO@sub 2@ and HfO@sub 2@ Gate Oxides Deposited by Atomic Layer Deposition (ALD) Using Metal Organic Precursors with Various Reactant Gas Sources J. Han, J. Koo, S. Choi, Y. Kim, H. Jeon, Hanyang University, Korea |
| 4:00pm | TF-TuA7 Trimethylaluminum-initiated ALD Growth of Al@sub 2@O@sub 3@ on Si: An In-situ Infrared Study M. Frank, Agere Systems and Rutgers University, Y.J. Chabal, G.D. Wilk, Agere Systems |
| 4:20pm | TF-TuA8 Atomic Layer Deposition of Aluminum Oxide Using Dimethylaluminum Isopropoxide and Water K.-S. An, S.S. Lee, W.T. Cho, Korea Research Institute of Chemical Technology, South Korea, J.M. Kim, Korea Institute of Machinery & Materials, South Korea, K. Sung, Y. Kim, Korea Research Institute of Chemical Technology, South Korea |
| 4:40pm | TF-TuA9 Atomic Layer Deposition of HfO@sub 2@ / Al@sub 2@O@sub 3@ Laminate Structure for Gate Dielectric Applications J. Koo, J. Han, S. Choi, Y. Kim, H. Jeon, Hanyang University, Korea |
| 5:00pm | TF-TuA10 Room Temperature NH@sub 3@-Catalyzed SiO@sub 2@ Atomic Layer Deposition Using Sequential Exposures of TEOS and H@sub 2@O J.D. Ferguson, S.M. George, University of Colorado |