AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA5
Atomic Layer Deposition of Zirconium Silicate Films Using Zirconium Tetrachloride and Tetra-n-butyl Orthosilicate

Tuesday, November 5, 2002, 3:20 pm, Room C-101

Session: Atomic Layer Deposition - Oxides
Presenter: S.W. Rhee, Pohang University of Science and Technology, Republic of Korea
Authors: S.W. Rhee, Pohang University of Science and Technology, Republic of Korea
W.K. Kim, Pohang University of Science and Technology, Republic of Korea
S.W. Kang, Pohang University of Science and Technology, Republic of Korea
N.I. Lee, Samsung Electronics Co., Ltd., Republic of Korea
J.H. Lee, Samsung Electronics Co., Ltd., Republic of Korea
H.K. Kang, Samsung Electronics Co., Ltd., Republic of Korea
Correspondent: Click to Email
Atomic layer chemical vapor deposition (ALCVD) of zirconium silicate films with a precursor combination of ZrCl@sub 4@ and TBOS (tetra-n-butyl orthosilicate) was studied for high dielectric gate insulators. Deposition conditions, such as deposition temperature and pulse time for purging and precursor injection, on the deposition rate per cycle and composition of the film were studied. At 400°C, the growth rate was saturated to 1.35 Å/cycle above 500 sccm of the argon purge flow rate. The growth rate, composition ratio ((Zr/Zr+Si)), and impurity contents (carbon and chlorine) were saturated with the increase of the injection time of ZrCl@sub 4@ and TBOS and decreased with the increase of the deposition temperature from 300 to 500°C. The growth rate, composition ratio, carbon and chlorine contents of the Zr silicate thin film deposited at 500°C were 1.05 Å/cycle, 0.26, 3.3 at.%, and 1.5 at.%, respectively. It seemed that by using only zirconium chloride and silicon alkoxide sources, impurity content of carbon and chlorine could not be lowered below 1%. Also it was found that the incorporation rate of metal from halide source was lower than alkoxide source. The electrical properties were characterized by C-V and I-V measurements. Interface was also observed with high resolution transmission electron microscopy (HRTEM).