AVS 49th International Symposium
    Thin Films Tuesday Sessions
       Session TF-TuA

Paper TF-TuA9
Atomic Layer Deposition of HfO@sub 2@ / Al@sub 2@O@sub 3@ Laminate Structure for Gate Dielectric Applications

Tuesday, November 5, 2002, 4:40 pm, Room C-101

Session: Atomic Layer Deposition - Oxides
Presenter: J. Koo, Hanyang University, Korea
Authors: J. Koo, Hanyang University, Korea
J. Han, Hanyang University, Korea
S. Choi, Hanyang University, Korea
Y. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
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Hafnium oxide (HfO@sub 2@) and aluminum oxide (Al@sub 2@O@sub 3@) have been widely investigated as an alternative gate oxide in sub-100nm metal-oxide-semiconductor technology due to its large band gap, good thermal stability, and relatively higher dielectric constant compared to SiO@sub 2@@footnote 1@. For these reasons, we investigated the characteristics of HfO@sub 2@ / Al@sub 2@O@sub 3@ laminate structure as well as its physical, chemical and electrical properties for gate dielectric applications. HfO@sub 2@ / Al@sub 2@O@sub 3@ films were deposited on p-type Si (100) substrate by atomic layer deposition (ALD) method. All samples after deposition were rapid thermal annealed at 800°C for 10 seconds in nitrogen ambient. And the platinum (Pt) layer with the thickness of about 1000 Å was deposited by e-beam evaporator and patterned to form the gate electrodes. Forming gas anneal was performed in an H@sub 2@+N@sub 2@ atmosphere at 450°C for 30 minutes. The electrical properties including equivalent oxide thickness, hysteresis, leakage current and dielectric constant were calculated and analyzed by using capacitance-voltage (C-V) and current density-voltage (J-V) measurements. For the evaluation of the physical and chemical characteristics of HfO@sub 2@ / Al@sub 2@O@sub 3@ films were analyzed by cross-sectional transmission electron microscope (XTEM), atomic force microscope (AFM), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). This paper will discuss the systematic analysis of HfO@sub 2@ / Al@sub 2@O@sub 3@ laminate films deposited by ALD for gate dielectric applications. @FootnoteText@@footnote 1@E. P. Gusev, M. Copel, E. Cartier, I. J. R. Baumvol, C. Krug, and M. A. Gribelyuk, Appl. Phys. Lett. 76, 176 (2000).