AVS 49th International Symposium
    Plasma Science Monday Sessions

Session PS1-MoA
Dielectric Etch I

Monday, November 4, 2002, 2:00 pm, Room C-103
Moderator: S.H. Moon, Seoul National University, Korea


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Click a paper to see the details. Presenters are shown in bold type.

2:00pm PS1-MoA1
Role of Fluorocarbon Radicals and Ions in SiO@sub 2@ Surface Etching Mechanism in Fluorocarbon-Based Discharges
X. Hua, L. Ling, X. Li, G.S. Oehrlein, University of Maryland, College Park, M. Barela, H.M. Anderson, University of New Mexico
2:20pm PS1-MoA2
Characteristics of c-C@sub 4@F@sub 8@, c-C@sub 4@F@sub 8@/Ar and c-C@sub 4@F@sub 8@/O@sub 2@ Inductively Coupled Plasmas for Dielectric Etching@footnote 1@
A.V. Vasenkov, University of Illinois at Urbana-Champaign, X. Li, G.S. Oehrlein, University of Maryland, College Park, M.J. Kushner, University of Illinois at Urbana-Champaign
2:40pm PS1-MoA3
Effects of Ar Gas Dilution on Precise SiO@sub 2@ Etching using CF@sub 3@I/ C@sub 2@F@sub 4@ Plasma
S. Samukawa, H. Ohtake, Tohoku University, Japan, H. Ishihara, A. Koshiishi, Tokyo Electron AT, Japan
3:00pm PS1-MoA4
Plasma Etching Chemistry and Kinetics for Silicon Oxide Thin Films
O. Kwon, H.H. Sawin, Massachusetts Institute of Technology
3:20pm PS1-MoA5
Electrical Conductivity of Sidewall Deposited Fluorocarbon in SiO@sub 2@ Contact Holes
T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane, Tohoku University, Japan
3:40pm PS1-MoA6
Silicon Oxide Highly Selective Etching Using Novel Solid Gas Sources
M. Nagai, M. Hori, T. Goto, Nagoya University, Japan
4:00pm PS1-MoA7
Ion-enhanced Chemical Etching of ZrO@sub 2@ in a Chlorine Discharge
L. Sha, J.P. Chang, University of California, Los Angeles
4:20pm PS1-MoA8
Ferroelectric Etching Characteristics in Ar/Cl@sub 2@ and in Ar/SF@sub 6@ Mixtures
L. Stafford, J. Margot, Universite de Montreal, Canada, M. Chaker, INRS-Energie et Materiaux, Canada
4:40pm PS1-MoA9
Measuring Vacuum Ultraviolet Radiation-Induced Damage
J.L. Lauer, J.L. Shohet, R.W.C. Hansen, University of Wisconsin-Madison
5:00pm PS1-MoA10
Transfer of Resist Roughness into Substrates during Plasma Etching
A.P. Mahorowala, D.L. Goldfarb, G.M. Gallatin, D. Pfeiffer, K.E. Petrillo, K. Babich, M. Angelopoulos, IBM T.J. Watson Research Center