AVS 49th International Symposium | |
Plasma Science | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | PS1-MoA1 Role of Fluorocarbon Radicals and Ions in SiO@sub 2@ Surface Etching Mechanism in Fluorocarbon-Based Discharges X. Hua, L. Ling, X. Li, G.S. Oehrlein, University of Maryland, College Park, M. Barela, H.M. Anderson, University of New Mexico |
2:20pm | PS1-MoA2 Characteristics of c-C@sub 4@F@sub 8@, c-C@sub 4@F@sub 8@/Ar and c-C@sub 4@F@sub 8@/O@sub 2@ Inductively Coupled Plasmas for Dielectric Etching@footnote 1@ A.V. Vasenkov, University of Illinois at Urbana-Champaign, X. Li, G.S. Oehrlein, University of Maryland, College Park, M.J. Kushner, University of Illinois at Urbana-Champaign |
2:40pm | PS1-MoA3 Effects of Ar Gas Dilution on Precise SiO@sub 2@ Etching using CF@sub 3@I/ C@sub 2@F@sub 4@ Plasma S. Samukawa, H. Ohtake, Tohoku University, Japan, H. Ishihara, A. Koshiishi, Tokyo Electron AT, Japan |
3:00pm | PS1-MoA4 Plasma Etching Chemistry and Kinetics for Silicon Oxide Thin Films O. Kwon, H.H. Sawin, Massachusetts Institute of Technology |
3:20pm | PS1-MoA5 Electrical Conductivity of Sidewall Deposited Fluorocarbon in SiO@sub 2@ Contact Holes T. Shimmura, S. Soda, S. Samukawa, M. Koyanagi, K. Hane, Tohoku University, Japan |
3:40pm | PS1-MoA6 Silicon Oxide Highly Selective Etching Using Novel Solid Gas Sources M. Nagai, M. Hori, T. Goto, Nagoya University, Japan |
4:00pm | PS1-MoA7 Ion-enhanced Chemical Etching of ZrO@sub 2@ in a Chlorine Discharge L. Sha, J.P. Chang, University of California, Los Angeles |
4:20pm | PS1-MoA8 Ferroelectric Etching Characteristics in Ar/Cl@sub 2@ and in Ar/SF@sub 6@ Mixtures L. Stafford, J. Margot, Universite de Montreal, Canada, M. Chaker, INRS-Energie et Materiaux, Canada |
4:40pm | PS1-MoA9 Measuring Vacuum Ultraviolet Radiation-Induced Damage J.L. Lauer, J.L. Shohet, R.W.C. Hansen, University of Wisconsin-Madison |
5:00pm | PS1-MoA10 Transfer of Resist Roughness into Substrates during Plasma Etching A.P. Mahorowala, D.L. Goldfarb, G.M. Gallatin, D. Pfeiffer, K.E. Petrillo, K. Babich, M. Angelopoulos, IBM T.J. Watson Research Center |