AVS 49th International Symposium
    Plasma Science Monday Sessions
       Session PS1-MoA

Paper PS1-MoA2
Characteristics of c-C@sub 4@F@sub 8@, c-C@sub 4@F@sub 8@/Ar and c-C@sub 4@F@sub 8@/O@sub 2@ Inductively Coupled Plasmas for Dielectric Etching@footnote 1@

Monday, November 4, 2002, 2:20 pm, Room C-103

Session: Dielectric Etch I
Presenter: A.V. Vasenkov, University of Illinois at Urbana-Champaign
Authors: A.V. Vasenkov, University of Illinois at Urbana-Champaign
X. Li, University of Maryland, College Park
G.S. Oehrlein, University of Maryland, College Park
M.J. Kushner, University of Illinois at Urbana-Champaign
Correspondent: Click to Email

Fluorocarbon plasmas are widely used for etching of silicon dioxide and other dielectrics. In particular, inductively coupled plasmas sustained in c-C@sub 4@F@sub 8@ with varying amounts of diluents such as Ar and O@sub 2@ are used to produce optimum fluxes of ions and radicals. To investigate plasma chemistry in these system, reaction mechanisms were developed for inductively coupled plasmas (ICPs) and reactive ion etching reactors sustained in c-C@sub 4@F@sub 8@, c-C@sub 4@F@sub 8@/Ar and c-C@sub 4@F@sub 8@/O@sub 2@ chemistries; and implemented into a 2-dimensional plasma equipment model. The limited electron impact cross-section data for the fluorocarbon species were collected and synthesized; and rate coefficients for gas phase chemistry were taken from independent studies in the literature or estimated from measurements for related species. The final mechanisms involve 46 species and over 300 reactions. Parametric modeling studies were performed for ICPs at powers from 400 W to 1400 W and in a pressure range from 6 mTorr to 20 mTorr for c-C@sub 4@F@sub 8@, c-C@sub 4@F@sub 8@/Ar, c-C@sub 4@F@sub 8@/O@sub 2@ plasmas. The mechanisms were validated by comparing to measured ion saturation currents obtained with probes. The dominant reaction pathways and strategies to optimize desired radical fluxes will be discussed. @FootnoteText@ @footnote 1@Work supported by Semiconductor Research Corp., National Science Foundation and Sematech.