| AVS 49th International Symposium | |
| Plasma Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-WeM1 Invited Paper Plasma Etch Chemistries for III-V Lasers and Light-Emitting Diodes S.J. Pearton, University of Florida |
| 9:00am | PS-WeM3 Surface Chemical Changes of Aluminum During NF3-Based In-Situ Chamber Cleaning: Critical Discharge Parameters X. Li, G.S. Oehrlein, X. Hua, L. Ling, University of Maryland, E. Karwacki, B. Ji, Air Products |
| 9:20am | PS-WeM4 Metal Etching in High-Density Plasmas R. Blumenthal, A.S. Orland, Auburn University |
| 9:40am | PS-WeM5 Effects of Dry Etch Process for Platinum Upper Electrodes on Electrical Properties of High-k (Ba,Sr)TiO@sub 3@ Thin-Film Capacitors D.-S. Wuu, R.-H. Horng, C.-Y. Kung, National Chung Hsing University, Taiwan ROC |
| 10:00am | PS-WeM6 Residual-Free Reactive Ion Etching of the Bell Contact Ti/Pt/Au G.F. Franz, R. Kachel, S. Sotier, University of Applied Sciences, Germany |
| 10:20am | PS-WeM7 Advanced Metal Gate Etch with 193nm Lithography in a Silicon Decoupled Plasma Source Etcher (DPSII) D. Yan, M. Shen, D. Shashank, Applied Materials, T. Chowdhury, C. Yang, Cypress Semiconductor |
| 10:40am | PS-WeM8 Effect of Carbon Based Polymer Formation on Process Stability in Polysilicon Etching S. Xu, S. Deshmukh, Th. Lill, Applied Materials, O. Joubert, CNRS/LTM, France |