AVS 49th International Symposium
    Plasma Science Wednesday Sessions
       Session PS-WeM

Paper PS-WeM5
Effects of Dry Etch Process for Platinum Upper Electrodes on Electrical Properties of High-k (Ba,Sr)TiO@sub 3@ Thin-Film Capacitors

Wednesday, November 6, 2002, 9:40 am, Room C-105

Session: Conductor Etch II
Presenter: D.-S. Wuu, National Chung Hsing University, Taiwan ROC
Authors: D.-S. Wuu, National Chung Hsing University, Taiwan ROC
R.-H. Horng, National Chung Hsing University, Taiwan ROC
C.-Y. Kung, National Chung Hsing University, Taiwan ROC
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Inductively-coupled-plasma (ICP) etching behavior of the platinum (Pt) thin films has been characterized with Ar gas by varying the etching parameters such as chamber pressure, ICP power, and bottom rf power. After the dry etch process, the restoring method of plasma-induced damage was investigated in terms of rapid-thermal and furnace annealing. Quantitative analysis of the etch damage was attempted to discuss the mechanism of leakage current density and dielectric constant with various bottom rf power and ICP power in Pt/(Bs,Sr)TiO@sub3@(BST)/Pt capacitor. It was found that the parameters of etching process for the top electrodes of BST capacitors would influence the methods of recovering technique. In this study, a better condition with lower leakage current density was observed under a coil power of 1000 W, bottom rf power of 100 W, and chamber pressure of 0.67 Pa. The plasma-induced damage samples can be effectively recovered with furnace annealed at around 600°C in oxygen ambience. It can not only improve the leakage current density less than 5x10@super-8@ A/cm@super2@ under an applied voltage of 1 V, but also enhances the dielectric constants to 350 for the damaged samples.