| AVS 49th International Symposium | |
| Applied Surface Science | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | AS-WeA1 Ultra-high Resolution AES Depth Profiling using a Masked Specimen Holder K. Satori, H. Kobayashi, SONY Corporation, Japan, K. Kimura, K. Nakajima, Kyoto University, Japan |
| 2:20pm | AS-WeA2 Sputtering Artifacts in Depth Profile Analysis of HfO@sub 2@ and HfSi@sub x@O@sub y@ C.F.H. Gondran, J.A. Bennett, M.R. Beebe, International SEMATECH |
| 2:40pm | AS-WeA3 Invited Paper Challenges for the Characterization and Integration of High-k Gate Dielectrics R.M. Wallace, University of North Texas |
| 3:20pm | AS-WeA5 Quantitative Depth Profiling of Hafnium Films by Electron Spectroscopies P. Mrozek, H. Krasinski, D. Sarigiannis, B. Kraus, Micron Technology Inc. |
| 3:40pm | AS-WeA6 Binding Energy Shifts in Soft X-ray Photoelectron Spectroscopy of HfO@sub 2@/SiO@sub 2@/Si High-k Gate-dielectric Structures M.D. Ulrich, J.G. Hong, J.E. Rowe, G. Lucovsky, North Carolina State University, T.E. Madey, Rutgers, The State University of New Jersey |
| 4:00pm | AS-WeA7 Chlorine and Oxygen Transport in ALD Grown ZrO@sub 2@ and HfO@sub 2@ Films on Silicon S. Ferrari, G. Scarel, C. Wiemer, S. Spiga, M. Fanciulli, Lab. MDM - INFM, Italy |
| 4:20pm | AS-WeA8 A Study of the Microstructure and Electrical Properties of the Reoxidized HfO@sub 2@ upon Annealing Methods D. Lee, H.-E. Seo, D.-H. Ko, M.-H. Cho, Yonsei University, Korea, C.-W. Yang, Sungkyunkwan University, Korea |