AVS 49th International Symposium
    Applied Surface Science Wednesday Sessions
       Session AS-WeA

Paper AS-WeA5
Quantitative Depth Profiling of Hafnium Films by Electron Spectroscopies

Wednesday, November 6, 2002, 3:20 pm, Room C-106

Session: High-k Dielectric Characterization
Presenter: P. Mrozek, Micron Technology Inc.
Authors: P. Mrozek, Micron Technology Inc.
H. Krasinski, Micron Technology Inc.
D. Sarigiannis, Micron Technology Inc.
B. Kraus, Micron Technology Inc.
Correspondent: Click to Email
Surface analysis was performed by AES/XPS on hafnium oxide and hafnium oxy - nitride films grown on silicon. Depth profiles, using elastic peak intensities, aided estimates for inelastic mean free path ratios. Subsequent AES and XPS quantitative analysis was performed using matrix correction factors that incorporated these ratios. Linear least squares analysis was used to deconvolute the different chemical states from elastic peaks and to identify phases within multilayers. Auger parameter, based on hafnium high energy Auger transitions M4N6,7N6,7 and the deep 3d5/2 core level, was used to verify the presence of oxide and silicide layers that were detected by these hafnium chemical state profiles. The results were compared with those obtained from the usual AES quantitative analysis approach to demonstrate the value of supplemental elastic peak measurements.