IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions

Session SS2-TuP
Semiconductor Reactions Poster Session

Tuesday, October 30, 2001, 5:30 pm, Room 134/135


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  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

SS2-TuP1
XPS Investigation of Trimethylsilane Dosed Ge (100) Surfaces
P.W. Wang, The University of Texas at El Paso, Y. Qi, University of Massachusetts, J.H. Craig, Bradley University
SS2-TuP3
Generation of Type-C Defects on Si(100) by Bimolecular Adsorption of Water: A FT-IR, STM, AES and QMS Study
M. Nishizawa, T. Yasuda, S. Yamasaki, Joint Research Center for Atom Technology (JRCAT), Japan, K. Miki, National Institute of Advanced Industrial Science and Technology (AIST), Japan, M. Shinohara, N. Kamakura, Y. Kimura, M. Niwano, Tohoku University, Japan
SS2-TuP5
Investigation of Surface Intermediates in Thermal Decomposition of Diethylmethylsilane on Si(111) using Low Energy Cs Ion Scattering and Thermal Desorption Spectroscopy
H.-G. Chi, Y. Kim, J.-H. Boo, S.K. Kim, S.-B. Lee, Sungkyunkwan University, Korea, H.T. Kwak, Kook Min University, Korea
SS2-TuP6
Interface Reaction of Cesium Layers Deposited on a H-terminated CVD Diamond
S. Yoshida, T. Inaba, T. Urano, S. Hongo, Kobe University, Japan