IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS2-TuP

Paper SS2-TuP5
Investigation of Surface Intermediates in Thermal Decomposition of Diethylmethylsilane on Si(111) using Low Energy Cs Ion Scattering and Thermal Desorption Spectroscopy

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Reactions Poster Session
Presenter: H.-G. Chi, Sungkyunkwan University, Korea
Authors: H.-G. Chi, Sungkyunkwan University, Korea
Y. Kim, Sungkyunkwan University, Korea
J.-H. Boo, Sungkyunkwan University, Korea
S.K. Kim, Sungkyunkwan University, Korea
S.-B. Lee, Sungkyunkwan University, Korea
H.T. Kwak, Kook Min University, Korea
Correspondent: Click to Email
The intermediate species produced in the decomposition of diethylmethylsilane on Si(111) were investigated in the range of 110 1200 K by using Cs@super +@ reactive ion scattering (RIS), low energy secondary ion mass spectrometry (SIMS) and thermal desorption spectroscopy. We will show that RIS gives more reliable evidence than SIMS for identification of surface species of this system. The results of low energy Cs@super +@ ion scattering indicate that molecular diethylmethylsilane and various alkylsilyl species such as (C@sub 2@H@sub 5@)@sub 2@Si, C@sub 2@H@sub 5@SiCH@sub 3@, C@sub 2@H@sub 5@Si, and CH@sub 4@Si as well as hydrocarbon species such as C@sub 2@H@sub 4@ and C@sub 2@H@sub 5@ exist on surface between 110-150 K. Above 300 K, all the alkylsilyl species are converted to CH@sub 4@Si, which decomposes completely to form SiC above 900 K. We will propose a possible mechanism for the SiC formation from the results of low energy ion scattering and thermal desorption spectroscopy.