IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS2-TuP

Paper SS2-TuP6
Interface Reaction of Cesium Layers Deposited on a H-terminated CVD Diamond

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Reactions Poster Session
Presenter: S. Yoshida, Kobe University, Japan
Authors: S. Yoshida, Kobe University, Japan
T. Inaba, Kobe University, Japan
T. Urano, Kobe University, Japan
S. Hongo, Kobe University, Japan
Correspondent: Click to Email
CVD diamond is potential for negative electron affinity (NEA)materials. Therefore, H-terminated and alkali adsorbed diamond surfaces have been studied intensively. It has been known that getting clean diamond surface is difficult. Because Ar ion sputtering and electron irradiation may result in amorphization of the diamond structure and heating the amorphous layer results in the formation of graphitic clusters. Cyclic adsorption and desorption of hydrogen also degrades the surface. Like this, the diamond surface is complicated and has inherent instability compared with Si surface. Therefore it is neccessary to reveal interface reaction to produce stable NEA devices. In this study hot-filament CVD diamond was used. All experiments were carried out in a UHV chamber equipped with thermal desorption spectroscopy, metastable deexcitaion spectroscopy, ultra violet photoelectron spectroscopy and Auger electron spectroscopy (AES). Cesium was deposited using SAES gettters Cs dispenser at 150 K. Atomic hydrogen produced by hot filament was used to terminate the diamond surface. It was found that 1)Multilayer(island) Cs is formed on Ar ion sputtered surface, 2)Multilayer(island) Cs desorption peak is not observed on a H-terminated surface, 3)Clear H@sub2@ desorption peak attributed to Cs-H bond foirmation (which is seen for Cs/H-terminated Si(100) sample) is not observed for Cs/H-terminated CVD diamond, 4)As raising the sample(Cs/H-terminated CVD diamond) temperature from 150 K to 470 K, AES peak of Cs decreases and that of C increases, though no Cs and H@sub2@ desorption peak are observed during heating. These experiments may suggest the formation of Cs-C-H mixture at low temperatures.