IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Surface Science Tuesday Sessions
       Session SS2-TuP

Paper SS2-TuP1
XPS Investigation of Trimethylsilane Dosed Ge (100) Surfaces

Tuesday, October 30, 2001, 5:30 pm, Room 134/135

Session: Semiconductor Reactions Poster Session
Presenter: P.W. Wang, The University of Texas at El Paso
Authors: P.W. Wang, The University of Texas at El Paso
Y. Qi, University of Massachusetts
J.H. Craig, Bradley University
Correspondent: Click to Email
Trimethylsilane (TMSi) was dosed onto a sputter cleaned Ge (100) surface at 145 + 5 oC and X-ray photonelectron spectroscopy (XPS) was used to study the cumulative effect of dosage, electron irradiation, temperature, and X-ray photon irradiation. The core level C 1s, Si 2p and Ge 3d photoelectrons were monitored. Arguments based on electronegativities of C, Si, and Ge and bond strengths of C-C, C-Si and C-Ge are invoked to interpret the interaction of TMSi with the Ge (100) surface under various external conditions. It is demonstrated that TMSi dissociatively chemisorbs initially at low coverage, but physisorbs molecularly at high coverage. Both electron irradiation and thermal effects cause the breaking of C-C or C-H bonds. New bonds of C-Ge are formed as a consequence. X-ray photon induced secondary electrons and local heating result in the dissociation of the adsorbed C-H or Si-H species which causes the initial concentration increase of Ge-C bonds. This study clearly shows the different pathways to form new species on the Ge (100) surfaces under various external conditions.