IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11) | |
Plasma Science | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
8:20am | PS+MS-ThM1 An Advanced 300 mm Etcher with Tunable Plasma Source for the Etching of <0.15mm Poly-Silicon Gates J. Holland, M. Jain, M. Shen, N. Gani, A.M. Paterson, V. Todorov, M.S. Barnes, K. Fairbairn, Applied Materials, Inc. |
8:40am | PS+MS-ThM2 Plasma-Based Copper Etch Process - Additive Gas Effects S. Lee, Y. Kuo, Texas A&M University |
9:00am | PS+MS-ThM3 Invited Paper Silicon Gate Etching: Potential Strategies for Future CMOS Devices G. Cunge, L. Vallier, O. Joubert, J. Foucher, X. Detter, CNRS/LTM, France |
9:40am | PS+MS-ThM5 Sidewall Passivation Mechanism of CF@sub4@ Added Polysilicon Gate Etch Process T. Lill, F. Ameri, S. Deshmukh, D. Podlesnik, Applied Materials, L. Vallier, O. Joubert, CNRS/LTM, France |
10:00am | PS+MS-ThM6 Manufacturing Viability of the "Notched Gate" Process for sub 0.1µm Technologies J. Foucher, L. Vallier, G. Cunge, O. Joubert, CNRS/LTM, France, T. Lill, Applied Materials |
10:20am | PS+MS-ThM7 Properties of Pulsed ICPs with rf Substrate Biases@footnote 1@ P. Subramonium, M.J. Kushner, University of Illinois |
10:40am | PS+MS-ThM8 Magnetic Field Effects and Electron Shading Damage W.W. Dostalik, Texas Instruments, Inc. |
11:00am | PS+MS-ThM9 Effects of H@sub 2@, D@sub 2@, N@sub 2@ and Ar Plasma on III-V Compound Semiconductor Devices B. Luo, University of Florida, K. Ip, Agere Systems, F. Ren, K.P. Lee, S.J. Pearton, C.R. Abernathy, University of Florida, R.J. Shul, Sandia National Laboratories, S.N.G. Chu, Agere Systems, C.W. Tu, University of California, San Diego, C.S. Wu, Win Semiconductor, K.D. Mackenzie, Unaxis USA Inc., C.H. Hsu, Feng Chia University, Taiwan |
11:40am | PS+MS-ThM11 Plasma Induced Physical Damage and Contamination on the SrBi@sub 2@Ta@sub 2@O@sub 9@ Thin Film after Etching in Cl@sub 2@/CF@sub 4@/Ar Plasma D.P. Kim, C.I. Kim, Chung-Ang University, Korea, W.J. Lee, B.G. Yu, ETRI, Korea |