IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Plasma Science Thursday Sessions

Session PS+MS-ThM
Conductor Etch and Damage

Thursday, November 1, 2001, 8:20 am, Room 104
Moderator: A.E. Wendt, University of Wisconsin, Madison


  Click here to Download program book for this session  
  in Adobe Acrobat format  

Click a paper to see the details. Presenters are shown in bold type.

8:20am PS+MS-ThM1
An Advanced 300 mm Etcher with Tunable Plasma Source for the Etching of <0.15mm Poly-Silicon Gates
J. Holland, M. Jain, M. Shen, N. Gani, A.M. Paterson, V. Todorov, M.S. Barnes, K. Fairbairn, Applied Materials, Inc.
8:40am PS+MS-ThM2
Plasma-Based Copper Etch Process - Additive Gas Effects
S. Lee, Y. Kuo, Texas A&M University
9:00am PS+MS-ThM3 Invited Paper
Silicon Gate Etching: Potential Strategies for Future CMOS Devices
G. Cunge, L. Vallier, O. Joubert, J. Foucher, X. Detter, CNRS/LTM, France
9:40am PS+MS-ThM5
Sidewall Passivation Mechanism of CF@sub4@ Added Polysilicon Gate Etch Process
T. Lill, F. Ameri, S. Deshmukh, D. Podlesnik, Applied Materials, L. Vallier, O. Joubert, CNRS/LTM, France
10:00am PS+MS-ThM6
Manufacturing Viability of the "Notched Gate" Process for sub 0.1µm Technologies
J. Foucher, L. Vallier, G. Cunge, O. Joubert, CNRS/LTM, France, T. Lill, Applied Materials
10:20am PS+MS-ThM7
Properties of Pulsed ICPs with rf Substrate Biases@footnote 1@
P. Subramonium, M.J. Kushner, University of Illinois
10:40am PS+MS-ThM8
Magnetic Field Effects and Electron Shading Damage
W.W. Dostalik, Texas Instruments, Inc.
11:00am PS+MS-ThM9
Effects of H@sub 2@, D@sub 2@, N@sub 2@ and Ar Plasma on III-V Compound Semiconductor Devices
B. Luo, University of Florida, K. Ip, Agere Systems, F. Ren, K.P. Lee, S.J. Pearton, C.R. Abernathy, University of Florida, R.J. Shul, Sandia National Laboratories, S.N.G. Chu, Agere Systems, C.W. Tu, University of California, San Diego, C.S. Wu, Win Semiconductor, K.D. Mackenzie, Unaxis USA Inc., C.H. Hsu, Feng Chia University, Taiwan
11:40am PS+MS-ThM11
Plasma Induced Physical Damage and Contamination on the SrBi@sub 2@Ta@sub 2@O@sub 9@ Thin Film after Etching in Cl@sub 2@/CF@sub 4@/Ar Plasma
D.P. Kim, C.I. Kim, Chung-Ang University, Korea, W.J. Lee, B.G. Yu, ETRI, Korea