Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | MS-TuA1 Plasma Etch Endpoint and Diagnostic Fault Detection Using Evolving Window Factor Analysis H.M. Anderson, University of New Mexico, S. Gunther, B. Fry, CETAC Technologies |
| 2:20pm | MS-TuA2 Characterization of Pattern Transfer from Litho to Etch Using Scatterometry T.G. Dziura, U. Whitney, A. Levy, KLA-Tencor, G.P. Kota, G. Peng, R.A. Gottscho, Lam Research |
| 2:40pm | MS-TuA3 Chamber Wall Monitoring and Control for Plasma Etching Reproducibility S.J. Ullal, T.-W. Kim, University of California, Santa Barbara, H. Singh, J. Daugherty, V. Vahedi, Lam Research Corporation, E.S. Aydil, University of California, Santa Barbara |
| 3:00pm | MS-TuA4 Integrated RF Sensor for Accurate Control and Monitoring of on Wafer Process Performance A.M. Paterson, J.M. McChesney, V. Todorov, J. Holland, M.S. Barnes, Applied Materials |
| 3:20pm | MS-TuA5 Invited Paper Fault Identification and Classification using a Plasma Impedance Monitor M.P. Hopkins, K. O’Leary, Scientific Systems, Ireland |
| 4:00pm | MS-TuA7 Real-Time CVD Wafer State Metrology using a Downstream Acoustic Sensor L. Henn-Lecordier, J.N. Kidder, G.W. Rubloff, University of Maryland, A. Wajid, C.A. Gogol, Inficon, Inc. |
| 4:20pm | MS-TuA8 Thickness Metrology and Real-Time End Point Control in W CVD using in-situ Mass Spectrometry@footnote 1@ Y. Xu, L. Henn-Lecordier, T. Gougousi, G.W. Rubloff, S. Cho, Y. Liu, University of Maryland |
| 4:40pm | MS-TuA9 In-situ FTIR Spectroscopy for Metrology of a Tungsten CVD Process A. Singhal, L. Henn-Lecordier, J.N. Kidder, University of Maryland, C.A. Gogol, J.F. Kushneir, Inficon, Inc. |
| 5:00pm | MS-TuA10 New Mass Spectrometer without Fragment Ions for CVD In-situ Monitoring Y. Shiokawa, M. Nakamura, K. Hino, T. Sasaki, Anelva Corporation, Japan |