IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Manufacturing Science and Technology Tuesday Sessions
       Session MS-TuA

Paper MS-TuA1
Plasma Etch Endpoint and Diagnostic Fault Detection Using Evolving Window Factor Analysis

Tuesday, October 30, 2001, 2:00 pm, Room 131

Session: In Line and In Situ Process Control
Presenter: H.M. Anderson, University of New Mexico
Authors: H.M. Anderson, University of New Mexico
S. Gunther, CETAC Technologies
B. Fry, CETAC Technologies
Correspondent: Click to Email

Array detector based systems with statistical analysis capability integrated with real-time data acquisition can provide a wealth of spectral information from a variety of potentially useful gas phase emitting species. In the case of particularly challenging applications such as low-open area self-aligned contact (SAC) etches, utilization of the full optical emission spectrum has been shown to accurately detect endpoint when all other endpoint systems studied failed. Production facility results regarding these and other demanding applications will be presented. The talk will largely focus on oxide etching in AMAT MXP and TEL DRM platforms. Evolving Window Factor Analysis (EWFA) is the principal multivariate techniques used in the analysis. They allow one to dynamically track the principal components of the oxide etch process. EWFA is also shown to useful for automatic fault detection.