| 8:20am |
DI-WeM1
Growth of Tantalum Oxide Films by Chemical Vapor and Atomic Layer Deposition
S. Prasertchoung, S.-Y. Yang, J.N. Kidder, University of Maryland |
| 8:40am |
DI-WeM2
Quantum Chemical Study of Zirconium Oxide Atomic Layer Deposition
Y. Widjaja, C.B. Musgrave, Stanford University |
| 9:00am |
DI-WeM3
Effect on In-situ H@sub 2@ Plasma Treatment of ZrO@sub 2@ Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method
J.H. Koo, Y. Kim, H. Jeon, Hanyang University, Korea |
| 9:20am |
DI-WeM4
Nucleation and Growth Chemistry during Tungsten Atomic Layer Deposition on Oxide Surfaces
R.K. Grubbs, University of Colorado, Boulder |
| 9:40am |
DI-WeM5
Atomic Layer Deposition of Al@sub 2@O@sub 3@/ZnO Nanolaminates and Alloys: Fabrication and Properties
J.W. Elam, M.D. Groner, Z.A. Sechrist, S.M. George, University of Colorado |
| 10:20am |
DI-WeM7
Radical Enhanced Atomic Layer Deposition of TiN Diffusion Barriers
F. Greer, D. Fraser, J.W. Coburn, D.B. Graves, University of California, Berkeley |
| 10:40am |
DI-WeM8
Characteristics of Tungsten Nitride Atomic Layer Deposition
H.S. Sim, Y.T. Kim, Korea Institute of Science and Technology, H. Jeon, Hanyang University, Korea |
| 11:00am |
DI-WeM9 Invited Paper
Deposition of Ultra Thin Films by Atomic layer Deposition (ALD)
M.A. Leskela, University of Helsinki, Finland |