IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Wednesday Sessions
       Session DI-WeM

Paper DI-WeM3
Effect on In-situ H@sub 2@ Plasma Treatment of ZrO@sub 2@ Gate Dielectric Deposited by Plasma Enhanced Atomic Layer Deposition Method

Wednesday, October 31, 2001, 9:00 am, Room 130

Session: Atomic Layer Deposition for Silicon Devices
Presenter: Y. Kim, Hanyang University, Korea
Authors: J.H. Koo, Hanyang University, Korea
Y. Kim, Hanyang University, Korea
H. Jeon, Hanyang University, Korea
Correspondent: Click to Email
As the metal oxide semiconductor device continues scale down, the high-k gate dielectrics become one of the solutions in providing increased capacitance and reduced leakage currents without significantly increasing the actual equivalent oxide thickness (EOT) of gate dielectrics. Among the high-k materials, ZrO@sub 2@ is considered as one of the alternatives to SiO@sub 2@ gate dielectric due to the relatively high dielectric constant (~25), low leakage current and its compatibility with the manufacturing of integrated circuits.@footnote 1@ Here, we focus on the in-situ H@sub 2@ plasma effect on ZrO@sub 2@ gate dielectric deposited by plasma enhanced atomic layer deposition (PEALD) method. ZrO@sub 2@ were deposited on p-type Si (100) substrates at 200-300°C using t-butoxide as Zr precursor and oxygen as reactant gas at the process pressure of about 1 Torr. Initial native oxide layer was removed by in-situ hydrogen plasma treatment before ZrO@sub 2@ deposition at the same processing temperature. Oxygen reactant gas was introduced both as in gas and plasma states. About 1000Å layer of Platinum (Pt) as gate electrodes were deposited by e-beam evaporator. The electrical properties of this MOS capacitor were measured after post metal annealing. The physical and chemical characteristics of ZrO@sub 2@ film were analyzed by cross-sectional transmission electron microscope, atomic force microscope, Auger electron spectroscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The results of electrical properties and reliability characteristics including EOT, hysteresis, leakage current and capacitance were measured by I-V and C-V. This paper presents the plasma effect on ZrO@sub 2@ films deposited by PEALD method and its potential applications for gate dielectric in ultra large-scale integrated circuit devices. @FootnoteText@ @footnote 1@W. Qi, R. Nieh, B. H. Lee, L. Kang, Y. Jeon and J. C. Lee, Appl. Phys. Lett., 77, 3269-3271 (2000).