IUVSTA 15th International Vacuum Congress (IVC-15), AVS 48th International Symposium (AVS-48), 11th International Conference on Solid Surfaces (ICSS-11)
    Dielectrics Wednesday Sessions
       Session DI-WeM

Paper DI-WeM5
Atomic Layer Deposition of Al@sub 2@O@sub 3@/ZnO Nanolaminates and Alloys: Fabrication and Properties

Wednesday, October 31, 2001, 9:40 am, Room 130

Session: Atomic Layer Deposition for Silicon Devices
Presenter: J.W. Elam, University of Colorado
Authors: J.W. Elam, University of Colorado
M.D. Groner, University of Colorado
Z.A. Sechrist, University of Colorado
S.M. George, University of Colorado
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Atomic layer deposition (ALD) of Al@sub 2@O@sub 3@ and ZnO films can be accomplished using sequential exposures to Al(CH@sub 3@)@sub 3@/H@sub 2@O and Zn(CH@sub 2@CH@sub 3@)@sub 2@/H@sub 2@O, respectively. ALD Al@sub 2@O@sub 3@ is smooth, amorphous and insulating. ALD ZnO is rough, crystalline and conducting. Composite mixtures of Al@sub 2@O@sub 3@ and ZnO may have unique and interesting properties. Al@sub 2@O@sub 3@/ZnO nanolaminates and alloys were deposited by ALD in a viscous flow reactor. The Al@sub 2@O@sub 3@/ZnO composite film growth was monitored using an in situ quartz crystal microbalance. A series of Al@sub 2@O@sub 3@/ZnO nanolaminates was prepared where the total thickness of Al@sub 2@O@sub 3@ and ZnO was kept constant while varying the number of individual Al@sub 2@O@sub 3@/ZnO bilayers. Atomic force microscopy was used to measure the root mean squared (RMS) surface roughness of the Al@sub 2@O@sub 3@/ZnO nanolaminate films. The RMS roughness of the nanolaminate films decreased dramatically versus the number of Al@sub 2@O@sub 3@/ZnO bilayers. A series of Al@sub 2@O@sub 3@/ZnO alloy films was also grown using ALD by varying the relative number of Al(CH@sub 3@)@sub 3@/H@sub 2@O and Zn(CH@sub 2@CH@sub 3@)@sub 2@/H@sub 2@O sequential exposures. Four-point probe and mercury probe measurements were performed to determine the resistivity of the Al@sub 2@O@sub 3@/ZnO alloys. The resistivity of the Al@sub 2@O@sub 3@/ZnO alloy films decreased with small Al@sub 2@O@sub 3@ percentage and then increased greatly with increasing Al@sub 2@O@sub 3@ percentage. These studies of the fabrication and properties of ALD composite films will serve as a model for the future development of ALD aluminates and silicates.