| AVS 47th International Symposium | |
| Semiconductors | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SC+EL+SS-WeA1 Invited Paper Si-Ge Heterostructures K.L. Wang, University of California, Los Angeles |
| 2:40pm | SC+EL+SS-WeA3 Critical Behavior of Epitaxial Si@sub 1-x@Ge@sub x@/Si(001) Islands R.A. Budiman, H.E. Ruda, D.D. Perovic, B. Bahierathan, University of Toronto, Canada |
| 3:00pm | SC+EL+SS-WeA4 Growth of Coherent Three-dimensional Si Islands on Ge(111) A. Raviswaran, C.P. Liu, University of Illinois, Urbana-Champaign, J.M. Gibson, Argonne National Laboratory, D.G. Cahill, University of Illinois, Urbana-Champaign |
| 3:20pm | SC+EL+SS-WeA5 Adatom Assisted Stabilization of Ad-dimers on Ge(001) E. Zoethout, H.J.W. Zandvliet, B. Poelsema, University of Twente, The Netherlands |
| 3:40pm | SC+EL+SS-WeA6 C Incorporation during the Growth Of Ge@sub 1-y@C@sub y@/Ge(001) from Hyperthermal Beams J. D'Arcy-Gall, D. Gall, P. Desjardins, I. Petrov, J.E. Greene, University of Illinois, Urbana |
| 4:00pm | SC+EL+SS-WeA7 Growth and Characterization of Metastable Ge@sub1-x@C@subx@ Thin Films on Si(100) Substrate. W. Li, D. Guerin, S.I. Shah, University of Delaware |
| 4:20pm | SC+EL+SS-WeA8 Electrical and Optical Properties of Silicon : Germanium Alloys prepared by DC Magnetron Sputtering A. Subrahmanyam, S. Karthikeyan, J. Asbalter, Indian Institute of Technology, Madras, India, P. Amirtharaj, National Institute of Standards and Technology |
| 4:40pm | SC+EL+SS-WeA9 Preparation and Characterization of Highly Li-doped a-Se Alloy Films for Thermal Neutron Detectors K.C. Mandal, B. Dille, R.D. Rauh, EIC Laboratories, Inc., A. Burger, Fisk University, R.N. Bhattacharyya, National Renewable Energy Laboratory |
| 5:00pm | SC+EL+SS-WeA10 Instability in Atomic Step Morphology during the Sublimation of Si(111) Y. Homma, P. Finnie, NTT Basic Research Laboratories, Japan |