AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeA

Paper SC+EL+SS-WeA5
Adatom Assisted Stabilization of Ad-dimers on Ge(001)

Wednesday, October 4, 2000, 3:20 pm, Room 306

Session: Semiconductor Alloys
Presenter: E. Zoethout, University of Twente, The Netherlands
Authors: E. Zoethout, University of Twente, The Netherlands
H.J.W. Zandvliet, University of Twente, The Netherlands
B. Poelsema, University of Twente, The Netherlands
Correspondent: Click to Email
Studies of the early stage of near room temperature growth of silicon on Ge(001) have revealed an inconsistency between experimental@footnote 1@ and theoretical@footnote 2@ work. Experimentally a stable cluster has been labeled to be a trough dimer oriented perpendicular to the substrate dimer bonds (D-dimer). The same type of cluster is found in the early stage of near room temperature homoepitaxial growth on Ge(001). Theoretically such a D-dimer is predicted to be energetically unfavorable. It turns out that the apparent D-dimer is actually comprised of three rather than two atoms. The three-atom cluster of Ge or Si on Ge(001) is shown to differ from a trough dimer orientated along the substrate dimer bonds, from a small epitaxial island and also from a three-atom Si cluster on Si(001). The three-atom cluster of Ge or Si on Ge(001) is composed of an ad-dimer in the D-configuration and an adatom on the neighboring substrate dimer row. @FootnoteText@ @Footnote 1@W. Wulfhekel, B.J. Hattink, H.J.W. Zandvliet, G. Rosenfeld, and B. Poelsema, Phys. Rev. Lett. 79, 2494 (1997). @Footnote 2@S.V. Khare, R.V. Kulkarni, D. Stroud and J.W. Wilkins, Phys. Rev. Lett. 60, 4458 (1999).