AVS 47th International Symposium
    Semiconductors Wednesday Sessions
       Session SC+EL+SS-WeA

Paper SC+EL+SS-WeA9
Preparation and Characterization of Highly Li-doped a-Se Alloy Films for Thermal Neutron Detectors

Wednesday, October 4, 2000, 4:40 pm, Room 306

Session: Semiconductor Alloys
Presenter: K.C. Mandal, EIC Laboratories, Inc.
Authors: K.C. Mandal, EIC Laboratories, Inc.
B. Dille, EIC Laboratories, Inc.
R.D. Rauh, EIC Laboratories, Inc.
A. Burger, Fisk University
R.N. Bhattacharyya, National Renewable Energy Laboratory
Correspondent: Click to Email
This paper describes our recent research in developing highly Li-doped a-Se alloys and thin films for thermal neutron detector applications. The grown Li-doped (35 a/o) a-Se alloy thin films have shown high promise for this application due to the presence of Li in high concentrations, high dark resistivity (2x10@super 14@@ohm@. cm), good charge transport properties (mu-tau@sub e@ = 3.2x10@super -6@ cm@super 2@/V), low cost and relatively easy scale up. Highly Li-doped a-Se alloy has been synthesized in controlled ambient and used for making large area films up to 4x4 sq. inch. The vacuum evaporated a-Se alloy films have been characterized by X-ray diffraction (XRD), atomic absorption (AA), differential thermal analysis (DTA), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). The detectors fabricated from these films have demonstrated potential for thermal neutron detection for the first time. Details of various steps involved in detector fabrication and testing of these devices will also be presented.