| AVS 47th International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | PS2-WeA1 Undercut and Bowing Characterisation in High Aspect Ratio Trenches of Poly-Si Etched in an ICP Reactor using Cryogenic SF6/O2 Chemistry Process M. Boufnichel, University of Orleans, CNRS, France, S. Aachboun, ST Microelectronics, France, G. Marcos, P. Ranson, GREMI, France |
| 2:20pm | PS2-WeA2 Origin of Sidewall Deposition during Cl@sub 2@/O@sub 2@ Etching of Sub Micron Features in Inductively Coupled Plasma Reactors S.J. Ullal, A.R. Godfrey, E.S. Aydil, University of California, Santa Barbara, E.A. Edelberg, L.B. Braly, V. Vahedi, J. Daugherty, Lam Research Corporation |
| 2:40pm | PS2-WeA3 Profile Simulation of Poly-Silicon Gate Features Etched with Cl2/HBr/O2 Plasmas L.B. Braly, D. Cooperberg, V. Vahedi, Lam Research Corp. |
| 3:00pm | PS2-WeA4 Feature Profile Evolution during Pulsed Plasma Etching: Effects of Redeposition of Time-Dependent Etch Products K. Ono, H. Kousaka, Kyoto University, Japan |
| 3:20pm | PS2-WeA5 A Model for Si Etching in an Inductively Coupled SF@sub 6@/C@sub 4@F@sub 8@ Discharge S. Rauf, W. Dauksher, V. Arunachalam, P. Ventzek, Motorola Inc., L. Lea, S. Hall, Surface Technology Systems, UK |
| 3:40pm | PS2-WeA6 An Integrated Model for Oxide Etch using Fluorocarbon Plasmas V. Arunachalam, S. Rauf, P. Ventzek, T. Sparks, Motorola Inc. |
| 4:00pm | PS2-WeA7 Modeling of Trench Filling During Ionized Metal Physical Vapor Deposition@footnote 1@ J. Lu, M.J. Kushner, University of Illinois at Urbana-Champaign |
| 4:20pm | PS2-WeA8 Process Characterization for Tapered Contact Etch F.G. Celii, Q. He, J. DeBord, Texas Instruments, Inc., H. Sakima, Tokyo Electron America |
| 4:40pm | PS2-WeA9 Understanding the Evolution of Trench Profiles in the Via-First Dual Damascene Integration Scheme T. Kropewnicki, K. Doan, B. Tang, C. Björkman, Applied Materials |
| 5:00pm | PS2-WeA10 Microtrenching, Etching and Sidewall Passivation in Contact Holes and Edge Regions B. Abraham-Shrauner, C. Liu, Washington University |