AVS 47th International Symposium
    Plasma Science and Technology Wednesday Sessions
       Session PS2-WeA

Paper PS2-WeA6
An Integrated Model for Oxide Etch using Fluorocarbon Plasmas

Wednesday, October 4, 2000, 3:40 pm, Room 311

Session: Feature Evolution
Presenter: V. Arunachalam, Motorola Inc.
Authors: V. Arunachalam, Motorola Inc.
S. Rauf, Motorola Inc.
P. Ventzek, Motorola Inc.
T. Sparks, Motorola Inc.
Correspondent: Click to Email
Precise control of feature profile evolution during oxide etch using fluorocarbon plasmas is crucial to successful multilevel metallization. An important step in achieving this control is an understanding of the underlying physics and chemistry of the process across the various length scales ranging from the equipment scale to the feature scale, and their relationship to the equipment level knobs. This important step is captured through an integrated model comprised of an equipment scale model, a sheath model and a feature scale model. Using this model, the effect of typical process parameters on feature profile is examined in a generic inductively coupled plasma etching system. A surface chemistry mechanism developed using experimentally observed results is incorporated in the model. It includes processes such as polymer formation, ion assisted and thermal etching, ion sputtering and reflection, desorption and redeposition. The simulation results show the increase in anisotropy of the etch profile, decrease in the selectivity to the underlying silicon layer, and the transition from deposition to etch with increasing ion energy.