| AVS 47th International Symposium | |
| Plasma Science and Technology | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS+MS-WeM1 Plasma-Induced Charging Gate Oxide Pinhole Formation T.C. Ang, S.Y. Loong, P.I. Ong, W.B. Loh, Chartered Semiconductor Manufacturing, Singapore, Y.W. Teh, Nanyang Technological University, Singapore |
| 8:40am | PS+MS-WeM2 Effects of Plasma-induced Charging Damages on Thin Gate Oxide during Plasma Etching Processes Y.-K. Kim, K.-O. KIm, J.-Y. Kim, C.J. Choi, J.W. Kim, Hyundai Electronics Industries Co., Ltd., Korea |
| 9:00am | PS+MS-WeM3 Invited Paper The Use of Simultaneous Modulation of Source and Wafer RF to Reduce Plasma Induced Damage N. Hershkowitz, University of Wisconsin, Madison |
| 9:40am | PS+MS-WeM5 Effect of Oxide to Nitride Etch Selectivity on Plasma Induced Charging Damage S. Ma, C. Björkman, R. Wang, L. Zhang, H. Shan, Applied Materials Inc., R. Ramanathan, Conexant Systems |
| 10:00am | PS+MS-WeM6 Aspect Ratio Dependent Plasma-Induced Charging Damage in RF Pre-Cleaning of Metal Contact J. Kim, K.S. Shin, W.J. Park, C.J. Kang, T.-H. Ahn, J.-T. Moon, Samsung Electronics, Korea |
| 10:20am | PS+MS-WeM7 Real-time Observation of Relaxation of Disorder-induced Surface Stress T. Narushima, N. Ueda, University of Tsukuba, Japan, A.N. Itakura, National Research Institute for Metals, Japan, T. Kawabe, University of Tsukuba, Japan, M. Kitajima, National Research Institute for Metals, Japan |
| 10:40am | PS+MS-WeM8 Transient Charging Effects of Insulating Surfaces Exposed to a Plasma During Pulse Biased DC Magnetron Sputtering. E.V. Barnat, T.-M. Lu, Rensselaer Polytechnic Institute |