| AVS 47th International Symposium | |
| Dielectrics | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | DI+EL+MS-ThM1 Oxidation of Clean and H-passivated Silicon by Molecular and Atomic Oxygen X. Zhang, Rutgers University, Y.J. Chabal, Bell Laboratories, Lucent Technologies, E. Garfunkel, Rutgers University, S.B. Christman, E.E. Chaban, Bell Laboratories, Lucent Technologies |
| 8:40am | DI+EL+MS-ThM2 New Oxidation Process Using Collimated Hyperthermal Ozone Beam T. Nishiguchi, Y. Morikawa, M. Miyamoto, Meidensha Corporation, Japan, H. Nonaka, A. Kurokawa, S. Ichimura, Electrotechnical Laboratory, Japan |
| 9:00am | DI+EL+MS-ThM3 Nondestructive Investigation of the Si/SiO2 Interface by Spectroscopic Ellipsometry, Reflectance Difference Spectroscopy, Second Harmonic Generation, and X-ray Photoelectron Spectroscopy J.F.T. Wang, J.W. Keister, Y.M. Lee, G. Lucovsky, J.E. Rowe, D.E. Aspnes, North Carolina State University |
| 9:20am | DI+EL+MS-ThM4 Core-level Photoemission of Interface States on SiO@sub 2@/Si: Substrate Orientation Effects J.E. Rowe, Army Research Office, J.W. Keister, J.F.T. Wang, North Carolina State University, G.J. Jackson, T.E. Madey, Rutgers University, D.E. Aspnes, North Carolina State University |
| 9:40am | DI+EL+MS-ThM5 Spectroscopic and Electrical Characterization of the Evolution of Chemical Oxides Into Ultrathin Gate Oxides J. Eng, Jr., R.L. Opila, J.M. Rosamilia, J. Sapjeta, Y.J. Chabal, B.E. Weir, P. Silverman, T. Boone, R.L. Masaitis, T. Sorsch, M.L. Green, Bell Labs, Lucent Technologies |
| 10:00am | DI+EL+MS-ThM6 Studies on Accurate Determination of the Physical Thickness of nm Gate Oxides and its Correlation with the Electric Thickness D.W. Moon, H.K. Kim, H.J. Lee, H.M. Jo, Korea Research Institute of Standards and Science, H.S. Jang, H. Hwang, Kwangju Institute of Science and Technology, Korea |
| 10:20am | DI+EL+MS-ThM7 Bonding of Nitrogen in Silicon Oxynitride Films R.L. Opila, J. Eng, Jr., Y.J. Chabal, K.T. Queeney, Bell Laboratories, Lucent Technologies, J.P. Chang, University of California, Los Angeles |
| 10:40am | DI+EL+MS-ThM8 Photoemission Investigation of Nitrogen Incorporation at the Si/SiO@sub 2@ Interface J.E. Rowe, Army Research Office, J.W. Keister, North Carolina State University |
| 11:00am | DI+EL+MS-ThM9 Investigation of Fluorine in Dry Ultrathin Silicon Oxides G. Vereecke, E. Röhr, R.J. Carter, T. Conard, H. Dewitte, M.M. Heyns, IMEC, Belgium |
| 11:20am | DI+EL+MS-ThM10 Studies on Electrical Properties of Ultrathin Oxides of Silicon Grown by Wet Oxidation at Low Water Vapor Pressure V.K. Bhat, K.N. Bhat, A. Subrahmanyam, Indian Institute of Technology, India |
| 11:40am | DI+EL+MS-ThM11 Properties of SiO@sub 2@ Thin Films Deposited at Low Temperature on SiGe and Si Samples in O@sub 2@/TEOS Helicon Plasmas A. Goullet, D. Goghero, V. Fernandez, A. Granier, Institut des Matériaux Jean Rouxel, France, F. Meyer, Université de Paris XI, France, G. Turban, Institut des Matériaux Jean Rouxel, France |