AVS 47th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL+MS-ThM

Paper DI+EL+MS-ThM7
Bonding of Nitrogen in Silicon Oxynitride Films

Thursday, October 5, 2000, 10:20 am, Room 312

Session: Ultrathin Dielectrics and Interfaces
Presenter: R.L. Opila, Bell Laboratories, Lucent Technologies
Authors: R.L. Opila, Bell Laboratories, Lucent Technologies
J. Eng, Jr., Bell Laboratories, Lucent Technologies
Y.J. Chabal, Bell Laboratories, Lucent Technologies
K.T. Queeney, Bell Laboratories, Lucent Technologies
J.P. Chang, University of California, Los Angeles
Correspondent: Click to Email
Silicon oxynitride is a promising candidate to replace silicon dioxide in the next generation of microelectronic devices, but key aspects of the nitrogen chemistry in this material remain unresolved. This talk describes a twofold approach for understanding nitrogen bonding in these materials. The first approach employs surface analytical techniques, including photoelectron spectroscopy, infrared spectroscopy and near edge x-ray absorption fine structure, to study how oynitride precursors, suchas as nitric acid, nitromethane, and ammonia, react with silicon surfaces. The second approach uses the previous analytical techniques, along with electron spin resonance spectroscopy, to compare the nitrogen bonding states in silicon oxynitride and silicon nitride films prepared by thermal growth and ion implantation. Significant differences in the distribution of nitrogen bonding states and point defects are observed and correlated with the method of film preparation.