AVS 47th International Symposium
    Dielectrics Thursday Sessions
       Session DI+EL+MS-ThM

Paper DI+EL+MS-ThM5
Spectroscopic and Electrical Characterization of the Evolution of Chemical Oxides Into Ultrathin Gate Oxides

Thursday, October 5, 2000, 9:40 am, Room 312

Session: Ultrathin Dielectrics and Interfaces
Presenter: J. Eng, Jr., Bell Labs, Lucent Technologies
Authors: J. Eng, Jr., Bell Labs, Lucent Technologies
R.L. Opila, Bell Labs, Lucent Technologies
J.M. Rosamilia, Bell Labs, Lucent Technologies
J. Sapjeta, Bell Labs, Lucent Technologies
Y.J. Chabal, Bell Labs, Lucent Technologies
B.E. Weir, Bell Labs, Lucent Technologies
P. Silverman, Bell Labs, Lucent Technologies
T. Boone, Bell Labs, Lucent Technologies
R.L. Masaitis, Bell Labs, Lucent Technologies
T. Sorsch, Bell Labs, Lucent Technologies
M.L. Green, Bell Labs, Lucent Technologies
Correspondent: Click to Email
The goal of this study is to understand how the structure of wet chemical oxides change during oxidation, and to determine whether the quality of ultrathin oxides is sensitive to the type of of wet chemical treatments. Four wet chemical treatments were examined: 1. standard RCA, with an SC1 step (ammonium hydroxide and peroxide) followed by an SC2 step (hydrochloric acid and peroxide), 2. modified RCA, with an HF etch between the SC1 and SC2, 3. ozonated water, and 4. HF. X-ray photoelectron spectroscopy (XPS) and infrared spectroscopy (IR) have been used to probe the structure and composition of the wet chemical oxides. IR probes the long range order in the films, while XPS probes the local Si stoichiometry. Both techniques show that the ozone oxide has the highest quality. Despite large differences in the initial quality of the wet chemical oxides, rapid thermal oxidation of the chemical oxides produces oxide films that are spectroscopically similar. Electrical properties of the oxides will correlated with the spectroscopic studies.