| AVS 46th International Symposium | |
| Surface Science Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 2:00pm | SS1+EM-WeA1 Electronic Transport Properties of Silicon Surfaces@footnote 1@ K. Yoo, University of Tennessee, A.P. Baddorf, Oak Ridge National Laboratory, H.H. Weitering, University of Tennessee |
| 2:20pm | SS1+EM-WeA2 Reinterpretation of the Scanning Tunneling Microscopy Images of Si(100) (2x1) Dimers-Observation on a Defect Free Surface K. Hata, S. Yasuda, H. Shigekawa, University of Tsukuba, Japan |
| 2:40pm | SS1+EM-WeA3 STM-Study of the Absorption of Molecular Oxygen on GaAs(100) P. Kruse, J.G. McLean, A.C. Kummel, University of California, San Diego |
| 3:00pm | SS1+EM-WeA4 Chaotic-like Wavefunction Beating in Thin Silver Films with a Quasiperiodic Superstructure C.-S. Jiang, H. Yu, University of Texas, Austin, Ph. Ebert, Forschungszentrum J@um u@lich, Germany, X.-D. Wang, R. Diener, Q. Niu, C.K. Shih, University of Texas, Austin |
| 3:20pm | SS1+EM-WeA5 3C-SiC(100) c(4x2) Surface and Sub-Surface Probed by Core Level Photoemission Spectroscopy Using Synchrotron Radiation and by Scanning Tunneling Microscopy V. Derycke, H. Enriquez, P. Fonteneau, V.Yu. Aristov, P.G. Soukiassian, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France, G. Le Lay, CRMC2 - CNRS and Université de Provence, France, C. Grupp, A. Taleb-Ibrahimi, LURE, Université de Paris-Sud/Orsay, France |
| 3:40pm | SS1+EM-WeA6 Mechanistic Studies of SiO@sub 2@ Deposition from TEOS / Ozone L.D. Flores, C. Tindall, J.E. Crowell, University of California, San Diego |
| 4:00pm | SS1+EM-WeA7 Microcalorimetric Heats of Adsorption of Metals on Metal Oxide and Si(100) Surfaces D.E. Starr, University of Washington, D.J. Bald, Intel Corporation, J.E. Musgrove, J.T. Ranney, J.H. Larsen, C.T. Campbell, University of Washington |
| 4:20pm | SS1+EM-WeA8 Nucleation and Growth of Hemispherical Grained Silicon D. Llera-Rodriguez, E.G. Seebauer, University of Illinois, Urbana |
| 4:40pm | SS1+EM-WeA9 Characterization by STM of Interface between Silicon and Silicon Dioxide Layers Fabricated by Highly Concentrated Ozone H. Itoh, A. Kurokawa, K. Nakamura, S. Ichimura, Electrotechnical Laboratory, Japan |
| 5:00pm | SS1+EM-WeA10 Significant Effects of Arsenic Ion Implantation on Si Selective Epitaxy by Ultra-High Vacuum Chemical Vapor Deposition T. Furukawa, T. Nakahata, S. Maruno, Y. Tokuda, S. Satoh, Mitsubishi Electric Corporation, Japan |