AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS1+EM-WeA

Paper SS1+EM-WeA10
Significant Effects of Arsenic Ion Implantation on Si Selective Epitaxy by Ultra-High Vacuum Chemical Vapor Deposition

Wednesday, October 27, 1999, 5:00 pm, Room 606

Session: Semiconductor Surface Science
Presenter: T. Furukawa, Mitsubishi Electric Corporation, Japan
Authors: T. Furukawa, Mitsubishi Electric Corporation, Japan
T. Nakahata, Mitsubishi Electric Corporation, Japan
S. Maruno, Mitsubishi Electric Corporation, Japan
Y. Tokuda, Mitsubishi Electric Corporation, Japan
S. Satoh, Mitsubishi Electric Corporation, Japan
Correspondent: Click to Email
Great attention has been paid on Si selective epitaxial growth for an application into ultra large scale integration. For the practical application, however, surface conditions of a Si substrate, which is affected by preceding process steps such as plasma etching and ion implantation, may have a great influence on growth behaviors. In this work, we have investigated the effect of low energy arsenic ion implantation on the Si selective epitaxy by use of ultra-high vacuum chemical vapor deposition. The substrates were prepared through conventional n-channel MOSFET fabrication sequence. In the arsenic ion implantation, dosage was varied from 0 to 4x10@super 15@cm@super -2@, while acceleration energy was fixed to be 10 keV. Before the Si growth, the wafers were cleaned by chemical wet etching, whereas chemical oxide was removed by diluted HF solution. The epitaxy was performed at nominal temperature of 600°C with a pure Si@sub 2@H@sub 6@ source gas. For a non-implanted wafer, island-like growth occurs. With sufficient dosage of arsenic ions, however, an epitaxial Si layer with excellent surface morphology was successfully grown. X-ray photoelectron spectroscopy measurements reveal that a thin SiO@sub x@ layer is formed below the substrate surface by a preceding plasma etching process. The growth mode change is interpreted in terms of reduction of the SiO@sub x@ layer by means of an additional sputtering effect of the ion implantation.