AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS1+EM-WeA

Paper SS1+EM-WeA6
Mechanistic Studies of SiO@sub 2@ Deposition from TEOS / Ozone

Wednesday, October 27, 1999, 3:40 pm, Room 606

Session: Semiconductor Surface Science
Presenter: J.E. Crowell, University of California, San Diego
Authors: L.D. Flores, University of California, San Diego
C. Tindall, University of California, San Diego
J.E. Crowell, University of California, San Diego
Correspondent: Click to Email
The low temperature deposition of SiO@sub 2@ from the reaction of tetraethoxysilane (TEOS) and ozone has been studied in-situ at atmospheric pressures. The studies were performed in a prototypical atmospheric pressure chemical vapor deposition (APCVD) reactor utilizing a commercial injector / vent assembly. The gas phase reactions were followed during deposition at 400°C using gas-phase transmission FTIR spectroscopy. Evolution of gas phase products during TEOS / O@sub 3@ reactions were compared and quite distinct from those observed during reaction of TEOS / O@sub 2@. The primary products produced upon ozonolysis of TEOS are acetic acid, formic acid, formaldehyde, carbon monoxide, carbon dioxide, and water. Mechanistic details of the deposition process were aided by model reaction studies performed in a gas cell using transmission FTIR spectroscopy. The model studies involved reaction of ozone with observed and potential deposition byproducts, such as acetaldehyde. The spectroscopic observations will be discussed with an emphasis on reaction mechanisms and the reactive pathways leading to the production of deposition precursors, and the influence of additives and byproducts on the morphological nature of SiO@sub 2@ film growth.