AVS 46th International Symposium
    Surface Science Division Wednesday Sessions
       Session SS1+EM-WeA

Paper SS1+EM-WeA5
3C-SiC(100) c(4x2) Surface and Sub-Surface Probed by Core Level Photoemission Spectroscopy Using Synchrotron Radiation and by Scanning Tunneling Microscopy

Wednesday, October 27, 1999, 3:20 pm, Room 606

Session: Semiconductor Surface Science
Presenter: V. Derycke, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
Authors: V. Derycke, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
H. Enriquez, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
P. Fonteneau, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
V.Yu. Aristov, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
P.G. Soukiassian, Commissariat à l'Energie Atomique and Université de Paris-Sud/Orsay, France
G. Le Lay, CRMC2 - CNRS and Université de Provence, France
C. Grupp, LURE, Université de Paris-Sud/Orsay, France
A. Taleb-Ibrahimi, LURE, Université de Paris-Sud/Orsay, France
Correspondent: Click to Email

We investigate the 3C-SiC(100) c(4x2) reconstruction surface and sub-surface regions by Si 2p core level photoemission spectroscopy using synchrotron radiation at various photon energies and by atom resolved scanning tunneling microscopy (STM). The latter experiments are performed by tunneling into the empty and filled electronic states which allows to clearly identify both up- and down dimers (AUDD) [1] of the c(4x2) surface reconstruction. Contrary to earlier core level studies, we identify two surface shifted components at the Si 2p core level having the same intensity. These two Si 2p spectral surface features are clearly related to the up- and down-dimers (AUDD) of the c(4x2) surface reconstruction.@footnote 1@ In addition, two sub-surface shifted components are also found which shows that the sub-surface region is also significantly affected by stress far away from the outer surface, indicating the long range influence of the latter. The results also confirm that the c(4x2) reconstruction is terminated by one Si monolayer as already well established by various quantitative experimental investigations.@footnote 2@ These novel core level photoemission using synchrotron radiation and STM results further support the AUDD model of the 3C-SiC(100) c(4x2) surface reconstruction.@footnote 1@ However, they are clearly inconsistent with predictions of a "missing row asymmetric dimers" model (MRAD) recently proposed on the basis of ab initio pseudopotential calculations and STM image simulations.@footnote 3@ @FootnoteText@ @footnote 1@P. Soukiassian, F. Semond, L. Douillard, A. Mayne, G. Dujardin, L. Pizzagalli and C. Joachim, Phys. Rev. Lett. 78, 907 (1997). @footnote 2@see e.g. V.M. Bermudez, Phys. Stat. Sol. (b) 202, 447 (1997); and references therein. @footnote 3@3-W. Lu, P. Krüger and J. Pollmann, Phys. Rev. Lett. 81, 2292 (1998).