AVS 46th International Symposium | |
Plasma Science and Technology Division | Thursday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
2:00pm | PS1-ThA1 Invited Paper High Fidelity Pattern Transfer K. Kasama, K. Yoshida, N. Ikezawa, T. Uchiyama, NEC Corporation, Japan |
2:40pm | PS1-ThA3 High Volume Self Aligned Contact Etch for SRAM U. Raghuram, J.E. Nulty, Cypress Semiconductor |
3:00pm | PS1-ThA4 High Density Plasma Oxide Etching of SAC (Self-Aligned Contact) and 0.25 micron HARC (High Aspect Ratio Contact) Structures: Process and Repeatability Results L. Marquez, B. Bosch, O. Turmel, S. Darcy, J.M. Cook, Lam Research |
3:20pm | PS1-ThA5 The Angular Dependence of SiO@sub 2@, Si@sub 3@N@sub 4@, and Poly-Silicon Etching Rates in Inductively Coupled Fluorocarbon Plasmas C. Hedlund, F. Engelmark, H.-O. Blom, Uppsala University, Sweden, M. Schaepkens, G.S. Oehrlein, State University of New York at Albany |
3:40pm | PS1-ThA6 Process Optimization of Plasma Polymerized Resists for Advanced Lithography Applications O. Joubert, CNET/CNRS, France, C. Monget, L. Vallier, CNET France Telecom, T.W. Weidman, Applied Materials |
4:00pm | PS1-ThA7 DUV Resist Degradation and Surface Roughening under Plasma Exposure W.H. Yan, Microelectronic Division, IBM Corp., W. Moreau, R. Wise, Y. Cui, IBM Corp. |
4:20pm | PS1-ThA8 Transfer Etching of Bilayer Resists in Oxygen-based Plasmas A.P. Mahorowala, K. Babich, Q. Lin, D.R. Medeiros, K. Petrillo, J. Simons, M. Angelopoulos, IBM T.J. Watson Research Center, G.W. Reynolds, J.W. Taylor, University of Wisconsin, Madison |
4:40pm | PS1-ThA9 Integration of Metal Masking and Etching for Deep Submicron Patterning C.T. Gabriel, R. Kim, D.C. Baker, VLSI Technology |
5:00pm | PS1-ThA10 Manufacturable Aluminum RIE Processes for 150 nm and Beyond G. Stojakovic, X.J. Ning, Siemens Microelectronics Inc. at IBM/Siemens/Toshiba DRAM Development Alliance, E.W. Kiewra, IBM Microelectronics at IBM/Siemens/Toshiba DRAM Development Alliance, W. Kocon, IBM Microelectronics |