| AVS 46th International Symposium | |
| Plasma Science and Technology Division | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | PS-WeM1 Invited Paper The Ion-Assisted Etching and Profile Development of Silicon in Molecular and Atomic Chlorine E.S.G. Shaqfeh, Stanford University |
| 9:00am | PS-WeM3 Investigation through Simulation of the Effect of Ar Addition on the Cl@super +@/Cl@sub 2@@super +@ Ratio in Chlorine Discharges J. Helmsen, P. Loewenhardt, Applied Materials Inc. |
| 9:20am | PS-WeM4 Does Mask Charging Influence Sidewall Trench Formation ? H.C. Lee, G.S. Hwang, California Institute of Technology, H.S. Lee, Hyundai Electronics Co. Ltd., Korea, K.P. Giapis, California Institute of Technology, L. Desvoivres, L. Vallier, O. Joubert, France Telecom-CNET, France |
| 9:40am | PS-WeM5 Invited Paper Modeling Feature Evolution in Plasma Processes D.B. Graves, University of California, Berkeley |
| 10:20am | PS-WeM7 Feature Profile Evolution of SiO@sub 2@ Trenches in Fluorocarbon Plasmas H.H. Hwang, Thermosciences Institute, T.R. Govindan, M. Meyyappan, NASA Ames Research Center, V. Arunachalam, S. Rauf, D.G. Coronell, Motorola |
| 10:40am | PS-WeM8 Application of an Integrated Feature Scale Model to Ionized PVD of Cu Barrier and Seed Processes V. Arunachalam, D.G. Coronell, S. Rauf, P.L.G. Ventzek, X.-Y. Liu, Motorola Inc. |
| 11:00am | PS-WeM9 Analysis and Simulation of Mask Erosion During Dry Etching J. Westlinder, F. Engelmark, L.B. Jonsson, C. Hedlund, I.V. Katardjiev, H.-O. Blom, Uppsala University, Sweden |
| 11:20am | PS-WeM10 Characterization of Photoresist Trimming in a Lam TCP9400 With the Aid of a Profile Simulation V. Vahedi, Lam Research Corporation, S Lin, Lam Research Corporation, Taiwan, H.W. Chang, Lam Research Corporation, H.J. Tao, C.C. Chen, C.S. Tsai, M.S. Liang, Taiwan Semiconductor Manufacturing Company |