AVS 46th International Symposium
    Plasma Science and Technology Division Wednesday Sessions
       Session PS-WeM

Paper PS-WeM8
Application of an Integrated Feature Scale Model to Ionized PVD of Cu Barrier and Seed Processes

Wednesday, October 27, 1999, 10:40 am, Room 609

Session: Feature Profile Evolution
Presenter: V. Arunachalam, Motorola Inc.
Authors: V. Arunachalam, Motorola Inc.
D.G. Coronell, Motorola Inc.
S. Rauf, Motorola Inc.
P.L.G. Ventzek, Motorola Inc.
X.-Y. Liu, Motorola Inc.
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Ionized PVD has emerged as an important process for the deposition of Cu barrier and seed films in high aspect ratio features. Experiments have shown that ionized PVD results in improved bottom and sidewall coverage owing to the highly anisotropic ion fluxes and the resputtering caused by the energetic ions respectively. Our, previous work@footnote 1@ described the analysis of a single deposition step as a seamless integration of equipment, sheath, feature and atomistic level phenomena. We have extended and improved upon our previous model to consider more detailed process issues at the feature scale level. In particular, we have developed a three-dimensional Monte Carlo-based surface moving algorithm capable of simulating the deposition of multi-component films and multiple deposition steps. In this presentation, we demonstrate the applicability of the model to address process integration and the compositional control of multi-component films. The importance of the initial feature geometry, the ability of the depositing material to wet the underlying substrate, and the preferential sputtering of one film constituent over another will be discussed. @FootnoteText@ @footnote 1@ D. Coronell et al. AVS 1998 paper