| AVS 46th International Symposium | |
| Manufacturing Science and Technology Group | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| MS-WeP1 Effects of Trapped Charges on Hg-Schottky Capacitance-Voltage Measurement of N-type Epitaxial Silicon Wafers Q. Wang, D. Liu, J.T. Virgo, Mitsubishi Silicon America Corp. |
| MS-WeP2 A Two-Dimensional Modeling Study of Pattern Dependent Etching@footnote 1@ B. Lay, M.J. Kushner, University of Illinois, Urbana |
| MS-WeP3 Plasma Etch-Back Coupled to Chemical Mechanical Polishing for Sub 0.18 µm Shallow Trench Isolation Technology A. Schiltz, France Telecom, CNET-CNS, France, L. Palatini, ESPEO - Orleans University, France, M. Paoli, M. Rivoire, A. Prola, France Telecom, CNET-CNS |
| MS-WeP4 Composition of Si/Ge Films in Structures S. Soukane, T.S. Cale, Rensselaer Polytechnic Institute, C. Werner, A. Kersch, Siemens, Germany, M. Bloomfield, Rensselaer Polytechnic Institute |
| MS-WeP5 Development of New Etching Algorithm for Ultra Large Scale Integrated Circuit and Application of ICP(Inductive Coupled Plasma) Etcher Y.-C. Lee, K.-R. Byun, S.-H. Park, J.-W. Kang, E.-S. Kang, O.-K. Kwon, H.-J. Hwang, T.-W. Kim, Chung-Ang University, Korea |