AVS 46th International Symposium
    Manufacturing Science and Technology Group Wednesday Sessions
       Session MS-WeP

Paper MS-WeP1
Effects of Trapped Charges on Hg-Schottky Capacitance-Voltage Measurement of N-type Epitaxial Silicon Wafers

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: D. Liu, Mitsubishi Silicon America Corp.
Authors: Q. Wang, Mitsubishi Silicon America Corp.
D. Liu, Mitsubishi Silicon America Corp.
J.T. Virgo, Mitsubishi Silicon America Corp.
Correspondent: Click to Email
The accurate carrier concentration profiling is very critical during silicon wafer process such as dopant profiling measurements of epitaxial layer or ion implanation etc. The mercury probe (Hg-Schottky capacitance-voltage (CV)) is a standard method in this application. This method is however, very sensitive to the silicon wafer surface condition and is a challenging issue in semiconductor industry. A poor Schottky contact will produce an erroneous and misleading result. It was believed that the surface chemical preparation was an essential step to have a relatively accurate CV reading. Our recent study, however, showed that the surface chemical preparation is not the only factor. The electrical charges on surface are equally important to the CV measurement. This work studied this effect on the Schottky CV measurements in detail. A new method has been developed in which an electrical surface preparation has been used prior to the CV measurement. The new method significantly improved the accuracy and repeatability of CV measurement.