AVS 46th International Symposium
    Manufacturing Science and Technology Group Wednesday Sessions
       Session MS-WeP

Paper MS-WeP4
Composition of Si/Ge Films in Structures

Wednesday, October 27, 1999, 5:30 pm, Room 4C

Session: Poster Session
Presenter: S. Soukane, Rensselaer Polytechnic Institute
Authors: S. Soukane, Rensselaer Polytechnic Institute
T.S. Cale, Rensselaer Polytechnic Institute
C. Werner, Siemens, Germany
A. Kersch, Siemens, Germany
M. Bloomfield, Rensselaer Polytechnic Institute
Correspondent: Click to Email
In order to achieve optimum performance in SiGe base bipolar technology, the film composition must be carefully controlled.@footnote 1@ A detailed surface reaction mechanism for the chemical vapor deposition of SiGe on Si(100), using mixtures of hydrogen, dichlorosilane, hydrogen chloride and germane (H2, SiH2Cl2, HCl, GeH4) is discussed in this paper. The kinetic model involves a set of twelve reactions with several intermediate surface species, and includes both deposition and etching.@footnote 2@ Two reactions describe the migration of adsorbed chlorine and adsorbed hydrogen between silicon and germanium sites. Deposition simulations over device topographies are used to test the proposed kinetic model. Deposited film profiles, concentrations of each surface species, and composition (Si/Ge ratio) as a function of position in the simulated films, are predicted using the proposed chemical model in EVOLVE.@footnote 3@ We compare simulation results with available experimental data. @FootnoteText@ @footnote 1@1SiGeBase Bipolar Technology with 74 GHz fmax and 11 ps Gate Delay, T. F. Meister, H. Schafer, M. Franosch, W. Molzer, K. Aufinger, U. Scheler, C. Walz, M. Stolz , S. Boguth, and J. Bock, IEDM 95, IEEE, p.95-739 @footnote 2@2Kinetic Modeling of SiGe Deposition with SiH2Cl2 and GeH4, M. Hierlemann, C. Werner and H. Schafer, Abstract No. 726 in Electrochem. Soc. Abstracts Vol. 96-1, 1996, p. 900. @footnote 3@3EVOLVE is a low pressure transport and reaction simulator. EVOLVE 5.0b was released in November, 1998 (copyright T. S. Cale, 1989-1998).