| AVS 45th International Symposium | |
| Selected Energy Epitaxy Topical Conference | Wednesday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| 8:20am | SE-WeM1 Invited Paper Ab Initio Studies of the Surfaces and Growth of GaN and AlN W.A. Goddard III, R.P. Muller, B.L. Tsai, California Institute of Technology |
| 9:00am | SE-WeM3 Invited Paper Film Defects and Growth Dynamics in Wide Bandgap Epitaxy F.A. Ponce, Xerox Palo Alto Research Center |
| 9:40am | SE-WeM5 Invited Paper Growth of Thin Film Materials with Supersonic Molecular Beams W. Ho, Cornell University |
| 10:20am | SE-WeM7 Invited Paper Selected Energy Etching of Semiconductors by Electron-enhanced Surface Reactions H.P. Gillis, M.J. Christopher, University of California, Los Angeles, K.P. Martin, D.A. Choutov*, Georgia Tech |
| 11:40am | SE-WeM11 Velocity, Temperature, and Chemical Composition of a dc-Arcjet Plume J.B. Jeffries, J. Luque, W. Juchmann, SRI International |