AVS 45th International Symposium
    Selected Energy Epitaxy Topical Conference Wednesday Sessions
       Session SE-WeM

Invited Paper SE-WeM7
Selected Energy Etching of Semiconductors by Electron-enhanced Surface Reactions

Wednesday, November 4, 1998, 10:20 am, Room 327

Session: Selected Energy Epitaxial Growth Processes
Presenter: H.P. Gillis, University of California, Los Angeles
Authors: H.P. Gillis, University of California, Los Angeles
M.J. Christopher, University of California, Los Angeles
K.P. Martin, Georgia Tech
D.A. Choutov*, Georgia Tech
Correspondent: Click to Email
It is well established that the standard ion-enhanced dry etching methods (RIE, ECR, and CAIBE) can damage the sample during etching by momentum transfer from energetic ions. The result is degradation of optical, electrical, and morphological properties of etched surfaces. We will review these energy-dependent damage mechanisms from ion-enhanced etching, and present results from an alternative approach--Low Energy Electron Enhanced Etching (LE4)--that avoids ion bombardment altogether. LE4 gives mirror smooth surfaces (RMS surface roughness 2 - 3 Angstroms) and maintains stoichiometry in compound semiconductors while giving highly anisotropic pattern transfer in micrometer and nanometer scale structures in Si, GaAs, and GaN. Special emphasis will be placed on the role of electron energy thresholds in developing selective processes and in controlling the polishing or "smoothening" of the surface during etching. @FootnoteText@ *Present address: National Semiconductors, San Jose, CA.