AVS 45th International Symposium
    Selected Energy Epitaxy Topical Conference Wednesday Sessions
       Session SE-WeM

Invited Paper SE-WeM1
Ab Initio Studies of the Surfaces and Growth of GaN and AlN

Wednesday, November 4, 1998, 8:20 am, Room 327

Session: Selected Energy Epitaxial Growth Processes
Presenter: W.A. Goddard III, California Institute of Technology
Authors: W.A. Goddard III, California Institute of Technology
R.P. Muller, California Institute of Technology
B.L. Tsai, California Institute of Technology
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We have examined the reconstruction and growth of cubic GaN and AlN using Density Functional Theory with Generalized Gradient Approximations. We find stable surfaces for excess metal lead to a c(2x2) structure while stoichiometric leads to metal termination but a P(2x2) structure. Implications for growth will be discussed.