AVS 45th International Symposium
    Plasma Science and Technology Division Thursday Sessions

Session PS-ThM
Plasma Applications in Copper Metallization

Thursday, November 5, 1998, 8:20 am, Room 318/319/320
Moderator: D.B. Graves, University of California, Berkeley


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Click a paper to see the details. Presenters are shown in bold type.

8:20am PS-ThM1 Invited Paper
Plasma Processes for Copper Dual Damascene Interconnect in Advanced CMOS Technologies
J.E. Heidenreich, D. Edelstein, R. Goldblatt, W. Cote, C. Uzoh, IBM - Semiconductor R & D Center, T. McDevitt, A. Stamper, IBM Microelectronics, A.H. Simon, IBM - Semiconductor R & D Center, J. Dukovic, IBM T.J. Watson Research Center, R. Wachnik, H. Rathore, IBM - Semiconductor R & D Center, S. Luce, J. Slattery, IBM Microelectronics, J. Ryan, IBM - Semiconductor Research and Development Center
9:00am PS-ThM3
Low k Dielectric Etching in High Density Plasmas
O. Joubert, France Telecom CNET/DTM/TFM, L. Vallier, P. Czuprynski, France Telecom CNET
9:20am PS-ThM4
High Density Plasma Patterning of Organic Low Dielectric Constant Materials
T.E.F.M. Standaert, P.J. Matsuo, S.D. Allen, State University of New York, Albany, K.H.J.M. Robben, Eindhoven University of Technology, The Netherlands, G.S. Oehrlein, State University of New York, Albany, J.G. Langan, W.R. Entley, Air Products and Chemicals, Inc., R. Gutmann, T.M. Lu, Rensselaer Polytechnic Institute
9:40am PS-ThM5 Invited Paper
Plasma Deposition of Low-Dielectric-Constant Fluorinated Amorphous Carbon Interlayer Dielectrics
K. Endo, NEC Corporation, Japan
10:20am PS-ThM7
Sources of Asymmetry in Ionized Metal PVD Reactors@footnote 1@
J. Lu, M.J. Kushner, University of Illinois, Urbana-Champaign
10:40am PS-ThM8
Simulations for Process Optimization Issues in Ionized Metal PVD
P.L.G. Ventzek, M. Hartig, V. Arunachalam, D.G. Coronell, D. Denning, Motorola Inc.
11:00am PS-ThM9
Modeling of IMP Copper for Electroplating Seed Layer Application
H.M. Zhang, I. Hashim, P.J. Ding, B. Chin, J.C. Forster, Applied Materials
11:20am PS-ThM10
Metal Flux Ionization Fraction in Copper Ionized Physical Vapor Deposition@footnote 1@
T.G. Snodgrass, J.E. Foster, S. Lu, A.E. Wendt, J.H. Booske, J.L. Shohet, University of Wisconsin, Madison
11:40am PS-ThM11
Scattering and Sputtering Processes of Energetic Ar@super +@ and Cu@super +@ Ions on Cu Surfaces: Molecular Dynamics Simulations
C.F. Abrams, D.B. Graves, University of California, Berkeley