AVS 45th International Symposium
    Plasma Science and Technology Division Thursday Sessions
       Session PS-ThM

Invited Paper PS-ThM1
Plasma Processes for Copper Dual Damascene Interconnect in Advanced CMOS Technologies

Thursday, November 5, 1998, 8:20 am, Room 318/319/320

Session: Plasma Applications in Copper Metallization
Presenter: J.E. Heidenreich, IBM - Semiconductor R & D Center
Authors: J.E. Heidenreich, IBM - Semiconductor R & D Center
D. Edelstein, IBM - Semiconductor R & D Center
R. Goldblatt, IBM - Semiconductor R & D Center
W. Cote, IBM - Semiconductor R & D Center
C. Uzoh, IBM - Semiconductor R & D Center
T. McDevitt, IBM Microelectronics
A. Stamper, IBM Microelectronics
A.H. Simon, IBM - Semiconductor R & D Center
J. Dukovic, IBM T.J. Watson Research Center
R. Wachnik, IBM - Semiconductor R & D Center
H. Rathore, IBM - Semiconductor R & D Center
S. Luce, IBM Microelectronics
J. Slattery, IBM Microelectronics
J. Ryan, IBM - Semiconductor Research and Development Center
Correspondent: Click to Email
IBM has announced the implementation of Copper interconnect for a sub-0.25µm CMOS technology.@footnote 1@ This technology uses up to 6 levels of Copper wiring with a minimum metal contacted pitch of 0.63µm. Copper metalization offers the advantages of upto 40% reduction in wire resistance, increased allowable current density, and increase scalability, relative to Ti/Al(Cu) wiring which is commonly used in semiconductor applications. This technology was produced using a Dual Damascene integration scheme that dramatically reduces the number of steps necessary to build wiring levels. The industry, as a whole is moving toward both Copper metalization and Dual Damascene integration for reduced cost and increased performance. This talk will review the characteristics of this technology, and the results of our reliability evaluation. It will also focus on some of the special plasma processing challenges and opportunities that arise with the use of Dual damascene and Copper. @FootnoteText@ @footnote 1@D. Edelstein et al., Proc. IEEE IEDM, 773 (1997).