| AVS 45th International Symposium | |
| Plasma Science and Technology Division | Monday Sessions |
Click a paper to see the details. Presenters are shown in bold type.
| PS-MoP1 Plasma-CVD with a Pulsed DC Glow-Discharge: A Time Resolved Experimental Investigation@footnote 1@ T.A. Beer, J. Laimer, H. Störi, Technische Universität Wien, Austria |
| PS-MoP2 Comparison of Feature Profile Evolution for Halogen Plasma Etching of Silicon (100) K.H.A. Bogart, F.P. Klemens, Bell Laboratories, Lucent Technologies, J. Lane, Massachusetts Institute of Technology, M.V. Malyshev, Bell Laboratories, Lucent Technologies and Princeton Univ., V.M. Donnelly, A. Kornblit, J.T.C. Lee, Bell Laboratories, Lucent Technologies |
| PS-MoP3 Plasma Damage in Metal Etch Processes Using an Oxide Hardmask J.I. Colonell, N.A. Ciampa, Bell Laboratories, Lucent Technologies, M.V. Malyshev, Princeton University, V.M. Donnelly, J.T.C. Lee, C.P. Chang, K.P. Cheung, W.Y.C. Lai, C.T. Liu, C.S. Pai, H.M. Vaidya, Bell Laboratories, Lucent Technologies |
| PS-MoP4 2DINESE - Topography Simulation Software for Process Modeling and Optimization I.V. Katardjiev, Uppsala University, Sweden, G. Carter, Salford University, United Kingdom, S. Berg, Uppsala University, Sweden |
| PS-MoP5 A Comparison of Oxide Damage in MOS Capacitors in Plasma Cleaning Applications X.M. Tang, College of William and Mary, Q. Wang, Keithley Instruments, D.M. Manos, College of William and Mary |
| PS-MoP6 Etching and Cleaning using a Pulsed ICP Plasma D.M. Manos, X.M. Tang, College of William and Mary |
| PS-MoP7 Increase of Etch Resistance of Deep UV Photoresist by Implantation K.K. Ong, Nanyang Technological University, Singapore, C.P. Soo, National University of Singapore, M.H. Fan, Chartered Semiconductor Manufacturing Ltd., Singapore, A.J. Bourdillon, National University of Singapore, M.H. Liang, Nanyang Technological University, Singapore, L.H. Chan, Chartered Semiconductor Manufacturing Ltd, Singapore |
| PS-MoP8 An Integrated Surface Kinetics-Plasma Equipment Model for Etching and Deposition: Effects of Bias on Wall Reactions@footnote 1@ D. Zhang, M.J. Kushner, University of Illinois, Urbana-Champaign |
| PS-MoP9 Investigations of Oxide Etching Using Validated Plasma Models J.E. Johannes, T.J. Bartel, M. Gallis, E. Meeks, Sandia National Laboratories |
| PS-MoP10 Model for Etch Depth of Contact Hole B. Abraham-Shrauner, Washington University |
| PS-MoP11 Oxide Etch Characteristics of Inductively Coupled Plasmas Using Multipole Magnets for the Fabrication of Optical Waveguides K.J. An, D.H. Lee, G.B. Yoo, SungKyunKwan University, Korea, J.H. Joo, Kunsan National University, Korea, G.Y. Yeom, SungKyunKwan University, Korea |
| PS-MoP12 Consequences of Photon Injection in an Inductively Coupled Plasma@footnote 1@ E.R. Keiter, M.J. Kushner, University of Illinois, Urbana-Champaign |
| PS-MoP14 Low-Temperature Helicon Assisted Reactive Evaporation of Sn-doped and Ge-doped Silica Films for Planar Waveguide Photonics K.W. Gaff, A. Durandet, R.W. Boswell, The Australian National University |
| PS-MoP15 In-situ Cleaning of GaAs and Al@sub x@Ga@sub 1-x@As Surfaces and Production of Ohmic Contacts Using an Atomic Hydrogen Source Based on a Reflected Arc Discharge V.A. Kagadei, Research Institute of Semiconductor Devices, Russia, D.I. Proskurovsky, Institute of High Current Electronics, Russia |