AVS 45th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoP

Paper PS-MoP6
Etching and Cleaning using a Pulsed ICP Plasma

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Plasma Science and Technology Poster Session
Presenter: D.M. Manos, College of William and Mary
Authors: D.M. Manos, College of William and Mary
X.M. Tang, College of William and Mary
Correspondent: Click to Email
In this paper, we report studies of a pulsed ICP plasma using mixtures of argon, oxygen, water, hydrogen, and CF4 for removal of photoresist and cleaning and etching of SiO2. This paper reports measurements of the spatial and time-resolved electron temperature, plasma density, and measurements of the relative density of reactive species using optical emission spectrometry. Relative contributions of particle fluxes arising from ion vs. neutral species are estimated from measurement using heat flux and momentum sensors. The rf antenna power was monitored with current and voltage probes for 2 kW operation into dummy loads and into etching plasmas. Etching and cleaning rates were measured as a function of rf power, pulse frequency, duty cycle, gas composition, using SEM, AFM and a quartz microbalance. The modulation frequency and duty cycle were varied to optimize cleaning and etching efficiency. Experimental results are compared to a globally averaged model published by Ashida et. al.@footnote 1@ and to particle-in-cell simulations performed in this work, using MAGIC.@footnote 2@ @FootnoteText@ @footnote 1@S. Ashida, et. al., J. Vac. Sci. Techol., A13, 2498, (1995) @footnote 2@B. Goplen, et. al., "Magic Users Manual", MRC/WDC-R-409, August 1997