AVS 45th International Symposium
    Plasma Science and Technology Division Monday Sessions
       Session PS-MoP

Paper PS-MoP4
2DINESE - Topography Simulation Software for Process Modeling and Optimization

Monday, November 2, 1998, 5:30 pm, Room Hall A

Session: Plasma Science and Technology Poster Session
Presenter: I.V. Katardjiev, Uppsala University, Sweden
Authors: I.V. Katardjiev, Uppsala University, Sweden
G. Carter, Salford University, United Kingdom
S. Berg, Uppsala University, Sweden
Correspondent: Click to Email
2DINESE@footnote 1@ is a powerful two-dimensional topography simulation program designed specifically for process simulation in IC R&D and manufacturing. It can simulate virtually all erosion and deposition processes currently employed in IC manufacturing - Reactive Ion Etching, Ion Beam Etching, Plasma etching, wet chemical etching, various PVD and CVD methods, multilevel metalization, to name a few. 2DINESE is built on a robust numerical implementation of the Theory of Surface Evolution, based on the generalized Huygens Principle of Wavefront propagation in anisotropic media. The basic points of this theory will be presented and its numerical implementation briefly discussed. Ample simulation examples will also be presented as well as a demonstration of the program will be given. @FootnoteText@ @footnote 1@ 2DINESE is freely available for academic use.